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HAL114SF-E 参数 Datasheet PDF下载

HAL114SF-E图片预览
型号: HAL114SF-E
PDF下载: 下载PDF文件 查看货源
内容描述: 霍尔效应传感器系列 [Hall Effect Sensor Family]
分类和应用: 传感器
文件页数/大小: 17 页 / 147 K
品牌: MICRONAS [ MICRONAS ]
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HAL114  
4. Type Description  
4.1. HAL114  
Applications  
The HAL114 is the optimal sensor for applications with  
one magnetic polarity such as:  
The HAL114 is a unipolar switching sensor (see  
Fig. 4–1).  
– solid state switches,  
– contactless solution to replace micro switches,  
– position and end-point detection, and  
– rotating speed measurement.  
The output turns low with the magnetic south pole on the  
branded side of the package and turns high if the mag-  
netic field is removed. The sensor does not respond to  
the magnetic north pole on the branded side.  
For correct functioning in the application, the sensor re-  
quires only the magnetic south pole on the branded side  
of the package.  
Output Voltage  
V
O
B
HYS  
Magnetic Features:  
– switching type: unipolar  
V
OL  
– typical B : 21.1 mT at room temperature  
ON  
0
B
OFF  
B
ON  
B
– typical B : 17.1 mT at room temperature  
OFF  
– operates with static magnetic fields and dynamic mag-  
netic fields up to 20 kHz  
Fig. 4–1: Definition of magnetic switching points for  
the HAL114  
Magnetic Characteristics at T = –40 °C to +140 °C, V = 4.5 V to 24 V,  
J
DD  
Typical Characteristics for V = 12 V  
DD  
Magnetic flux density values of switching points.  
Positive flux density values refer to the magnetic south pole at the branded side of the package.  
Parameter  
On point B  
Typ.  
Off point B  
Typ.  
Hysteresis B  
Typ.  
Unit  
ON  
OFF  
HYS  
T
J
Min.  
7.5  
7
Max.  
36  
Min.  
4.3  
4
Max.  
33.2  
31.2  
28.9  
28.8  
Min.  
2.8  
2.8  
2.6  
2.2  
Max.  
5
–40 °C  
21.5  
21.1  
19.9  
19.4  
17.4  
17.1  
16.4  
16.1  
4.1  
4
mT  
mT  
mT  
mT  
25 °C  
100 °C  
140 °C  
34  
4.5  
4
6.3  
6.1  
31.5  
31.3  
3.6  
3.6  
3.5  
3.3  
4
The hysteresis is the difference between the switching points B  
= B – B  
ON OFF  
HYS  
The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas  
on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching  
points. Thisbehaviorisaphysicalphenomenonandnotamalfunctionofthesensor. Mechanicalstressonthehallplates  
can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering  
or operating the parts at extreme temperatures.  
Please use a sensor of the HAL 5xx family if a robustness against mechanical stress is required.  
10  
Micronas