HAL114
R
V
220
Ω
µA
2
10
V
DD
I
OH
1
10
0
10
–1
10
–2
10
–3
10
–4
10
V
OH
= 24 V
V
DD
= 5 V
4.7 nF
2
GND
1
V
DD
OUT
3
R
L
Fig. 16:
Recommended application circuit
Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T
J
) is higher
than the temperature outside the package (ambient tem-
perature T
A
).
0
50
100
150
T
A
200
°C
–50
T
J
= T
A
+
∆T
At static conditions, the following equations are valid:
– for SOT-89A:
– for TO-92UA:
∆T
= I
DD
* V
DD
* R
thJSB
∆T
= I
DD
* V
DD
* R
thJA
Fig. 15:
Typical output leakage current
versus temperature
Application Note
For electromagnetic immunity, it is recommended to ap-
ply a 330 pF minimum capacitor between V
DD
(pin 1)
and Ground (pin 2).
For applications requiring robustness to conducted dis-
turbances (transients), a 220
Ω
series resistor to pin 1
and a 4.7 nF capacitor between V
DD
(pin1) and Ground
(pin 2) is recommended. The series resistor and the ca-
pacitor should be placed as close as possible to the IC.
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for I
DD
and
R
th
, and the max. value for V
DD
from the application.
Data Sheet History
1. Final data sheet: “HAL114 Unipolar Hall Switch IC”,
June 10, 1998, 6251-456-1DS. First release of the final
data sheet.
MICRONAS INTERMETALL GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@intermetall.de
Internet: http://www.intermetall.de
Printed in Germany
by Systemdruck+Verlags-GmbH, Freiburg (06/98)
Order No. 6251-456-1DS
All information and data contained in this data sheet are with-
out any commitment, are not to be considered as an offer for
conclusion of a contract nor shall they be construed as to
create any liability. Any new issue of this data sheet invalidates
previous issues. Product availability and delivery dates are ex-
clusively subject to our respective order confirmation form; the
same applies to orders based on development samples deliv-
ered. By this publication, MICRONAS INTERMETALL GmbH
does not assume responsibility for patent infringements or
other rights of third parties which may result from its use.
Reprinting is generally permitted, indicating the source. How-
ever, our prior consent must be obtained in all cases.
8
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