DATA SHEET
HAL1000
ates an analog output voltage. After detecting a com-
mand, the sensor reads or writes the memory and
answers with a digital signal on the output pin. The dig-
ital output is switched off during the communication.
Internal temperature compensation circuitry and the
choppered offset compensation enables operation
over the full temperature range with minimal changes
of the switching points. The circuitry also rejects offset
shifts due to mechanical stress from the package. The
non-volatile memory consists of redundant EEPROM
cells. In addition, the HAL1000 is equipped with
devices for overvoltage and reverse-voltage protection
at all pins.
2. Functional Description
2.1. General Function
The HAL1000 is a monolithic integrated circuit which
provides a digital output signal. The sensor is based
on the HAL 8xx design. All blocks before the compara-
tor are identical to the HAL 810 and the signal process-
ing is very similar.
The Hall plate is sensitive to magnetic north and south
polarity. The external magnetic field component per-
pendicular to the branded side of the package gener-
ates a Hall voltage. This voltage is converted to a digi-
tal value and processed in the Digital Signal
Processing Unit (DSP) according to the settings of the
EEPROM registers. The function and the parameters
for the DSP are explained in Section 2.2. on page 6.
The setting of the LOCK register disables the program-
ming of the EEPROM memory for all time. This regis-
ter cannot be reset.
As long as the LOCK register is not set, the output
characteristic can be adjusted by programming the
EEPROM registers. The IC is addressed by modulat-
ing the supply voltage (see Fig. 2–1). In the supply
voltage range from 4.5 V up to 5.5 V, the sensor gener-
HAL
1000
8
V
DD
(V)
7
6
5
V
DD
V
OUT
(V)
V
DD
GND
OUT
protocol
digital
output
Fig. 2–1:
Programming with V
DD
modulation
V
DD
Internally
stabilized
Supply and
Protection
Devices
Temperature
Dependent
Bias
Oscillator
Protection
Devices
Switched
Hall Plate
A/D
Converter
Digital
Signal
Processing
Digital
Output
100
Ω
OUT
EEPROM Memory
Supply
Level
Detection
Lock Control
GND
Fig. 2–2:
HAL1000 block diagram
Micronas
March 4, 2004; 6251-528-1DS
5
MICRONAS [ MICRONAS ]
