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N25Q512A83GSF40G 参数 Datasheet PDF下载

N25Q512A83GSF40G图片预览
型号: N25Q512A83GSF40G
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q512A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1214 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, Multiple I/O Serial Flash Memory  
AC Characteristics and Operating Conditions  
AC Characteristics and Operating Conditions  
Table 41: AC Characteristics and Operating Conditions  
Parameter  
Symbol  
Min  
Typ1  
Max  
Unit  
Notes  
Clock frequency for all commands other than  
READ (SPI-ER, QIO-SPI protocol)  
fC  
DC  
108  
MHz  
Clock frequency for READ commands  
Clock HIGH time  
fR  
tCH  
tCL  
DC  
4
54  
8
7
8
5
6
8
8
MHz  
ns  
2
Clock LOW time  
4
ns  
1
Clock rise time (peak-to-peak)  
Clock fall time (peak-to-peak)  
S# active setup time (relative to clock)  
S# not active hold time (relative to clock)  
Data in setup time  
tCLCH  
tCHCL  
tSLCH  
tCHSL  
tDVCH  
tCHDX  
tCHSH  
tSHCH  
tSHSL1  
tSHSL2  
tSHQZ  
tCLQV  
0.1  
0.1  
4
V/ns  
V/ns  
ns  
3, 4  
3, 4  
4
ns  
2
ns  
Data in hold time  
3
ns  
S# active hold time (relative to clock)  
S# not active setup time (relative to clock)  
S# deselect time after a READ command  
S# deselect time after a nonREAD command  
Output disable time  
4
ns  
4
ns  
20  
50  
ns  
ns  
ns  
3
Clock LOW to output valid under 30pF  
STR  
ns  
DTR  
STR  
DTR  
ns  
Clock LOW to output valid under 10pF  
ns  
ns  
Output hold time (clock LOW)  
Output hold time (clock HIGH)  
tCLQX  
tCHQX  
tHLCH  
tCHHH  
tHHCH  
tCHHL  
tHHQX  
tHLQZ  
tWHSL  
tSHWL  
tVPPHSL  
1
ns  
1
ns  
HOLD command setup time (relative to clock)  
HOLD command hold time (relative to clock)  
HOLD command setup time (relative to clock)  
HOLD command hold time (relative to clock)  
HOLD command to output Low-Z  
4
ns  
4
ns  
4
ns  
4
ns  
ns  
3
3
5
5
6
HOLD command to output High-Z  
Write protect setup time  
ns  
20  
100  
200  
ns  
Write protect hold time  
ns  
Enhanced VPPH HIGH to S# LOW for extended and  
dual I/O page program  
ns  
WRITE STATUS REGISTER cycle time  
tW  
tWNVCR  
1.3  
0.2  
8
3
ms  
s
Write NONVOLATILE CONFIGURATION REGISTER  
cycle time  
CLEAR FLAG STATUS REGISTER cycle time  
tCFSR  
40  
ns  
PDF: 09005aef84752721  
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
83  
© 2011 Micron Technology, Inc. All rights reserved.