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MT48LC2M32B2TG 参数 Datasheet PDF下载

MT48LC2M32B2TG图片预览
型号: MT48LC2M32B2TG
PDF下载: 下载PDF文件 查看货源
内容描述: SDR SDRAM MT48LC2M32B2 â ???? 512K ×32× 4银行 [SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks]
分类和应用: 动态存储器
文件页数/大小: 80 页 / 3569 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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64Mb: x32 SDRAM
AUTO REFRESH Operation
AUTO REFRESH Operation
The AUTO REFRESH command is used during normal operation of the device to refresh
the contents of the array. This command is nonpersistent, so it must be issued each
time a refresh is required. All active banks must be precharged prior to issuing an AUTO
REFRESH command. The AUTO REFRESH command should not be issued until the
minimum
t
RP is met following the PRECHARGE command. Addressing is generated by
the internal refresh controller. This makes the address bits “Don’t Care” during an AU-
TO REFRESH command.
After the AUTO REFRESH command is initiated, it must not be interrupted by any exe-
cutable command until
t
RFC has been met. During
t
RFC time, COMMAND INHIBIT or
NOP commands must be issued on each positive edge of the clock. The SDRAM re-
quires that every row be refreshed each
t
REF period. Providing a distributed AUTO RE-
FRESH command—calculated by dividing the refresh period (
t
REF) by the number of
rows to be refreshed—meets the timing requirement and ensures that each row is re-
freshed. Alternatively, to satisfy the refresh requirement a burst refresh can be employed
after every
t
REF period by issuing consecutive AUTO REFRESH commands for the num-
ber of rows to be refreshed at the minimum cycle rate (
t
RFC).
PDF: 09005aef811ce1fe
64mb_x32_sdram.pdf - Rev. T 04/13 EN
73
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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1999 Micron Technology, Inc. All rights reserved.