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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR3 SDRAM  
On-Die Termination (ODT)  
On-Die Termination (ODT)  
On-die termination (ODT) is a feature that enables the DRAM to enable/disable and  
turn on/off termination resistance for each DQ, DQS, DQS#, and DM for the x4 and x8  
configurations (and TDQS, TDQS# for the x8 configuration, when enabled). ODT is ap-  
plied to each DQ, UDQS, UDQS#, LDQS, LDQS#, UDM, and LDM signal for the x16 con-  
figuration.  
ODT is designed to improve signal integrity of the memory channel by enabling the  
DRAM controller to independently turn on/off the DRAM’s internal termination resist-  
ance for any grouping of DRAM devices. ODT is not supported during DLL disable  
mode (simple functional representation shown below). The switch is enabled by the in-  
ternal ODT control logic, which uses the external ODT ball and other control informa-  
tion.  
Figure 109: On-Die Termination  
ODT  
VDDQ/2  
To other  
circuitry  
such as  
RCV,  
RTT  
Switch  
DQ, DQS, DQS#,  
DM, TDQS, TDQS#  
. . .  
Functional Representation of ODT  
The value of RTT (ODT termination resistance value) is determined by the settings of  
several mode register bits (see Table 80 (page 196)). The ODT ball is ignored while in  
self refresh mode (must be turned off prior to self refresh entry) or if mode registers  
MR1 and MR2 are programmed to disable ODT. ODT is comprised of nominal ODT and  
dynamic ODT modes and either of these can function in synchronous or asynchronous  
mode (when the DLL is off during precharge power-down or when the DLL is synchro-  
nizing). Nominal ODT is the base termination and is used in any allowable ODT state.  
Dynamic ODT is applied only during writes and provides OTF switching from no RTT or  
RTT,nom to RTT(WR).  
The actual effective termination, RTT(EFF), may be different from RTT targeted due to  
nonlinearity of the termination. For RTT(EFF) values and calculations, see ODT Charac-  
teristics (page 50).  
Nominal ODT  
ODT (NOM) is the base termination resistance for each applicable ball; it is enabled or  
disabled via MR1[9, 6, 2] (see Mode Register 1 (MR1) Definition), and it is turned on or  
off via the ODT ball.  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
193  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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