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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT41J256M4的Datasheet PDF文件第141页浏览型号MT41J256M4的Datasheet PDF文件第142页浏览型号MT41J256M4的Datasheet PDF文件第143页浏览型号MT41J256M4的Datasheet PDF文件第144页浏览型号MT41J256M4的Datasheet PDF文件第146页浏览型号MT41J256M4的Datasheet PDF文件第147页浏览型号MT41J256M4的Datasheet PDF文件第148页浏览型号MT41J256M4的Datasheet PDF文件第149页  
1Gb: x4, x8, x16 DDR3 SDRAM  
Mode Register 2 (MR2)  
Figure 57: Mode Register 2 (MR2) Definition  
A13  
BA2 BA1 BA0  
A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0  
Address bus  
16 15 14 13 12 11 10  
9
8
7
6
5
4
3
2
1
0
Mode register 2 (MR2)  
RTT(WR)  
1
1
1
1
1
1
1
1
0
SRT ASR  
CWL  
1
0
0
0
0
0
0
0
0
M15 M14  
Mode Register  
M7 Self Refresh Temperature  
M5 M4 M3  
CAS Write Latency (CWL)  
t
0
0
1
1
0
1
0
1
Mode register set 0 (MR0)  
Mode register set 1 (MR1)  
Mode register set 2 (MR2)  
Mode register set 3 (MR3)  
0
1
Normal (0°C to 85°C)  
Extended (0°C to 95°C)  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
5 CK ( CK •2.5ns)  
t
6 CK (2.5ns ! CK •1.875ns)  
t
7 CK (1.875ns ! CK •1.5ns)  
t
8 CK (1.5ns ! CK •1.25ns)  
t
9 CK (1.25ns ! CK •1.07ns)  
t
10 CK (1.071ns ! CK •0.938ns)  
Auto Self Refresh  
(Optional)  
Dynamic ODT  
M6  
0
Reserved  
Reserved  
M10 M9  
(RTT(WR) )  
Disabled: Manual  
Enabled: Automatic  
0
0
1
1
0
1
0
1
R
TT(WR) disabled  
1
RZQ/4  
RZQ/2  
Reserved  
1. MR2[16, 13:11, 8, and 2:0] are reserved for future use and must all be programmed to 0.  
Note:  
CAS Write Latency (CWL)  
CWL is defined by MR2[5:3] and is the delay, in clock cycles, from the releasing of the  
internal write to the latching of the first data in. CWL must be correctly set to the corre-  
sponding operating clock frequency (see Figure 50 (page 145)). The overall WRITE la-  
tency (WL) is equal to CWL + AL (Figure 55 (page 141)).  
Figure 58: CAS Write Latency  
T11  
T0  
T1  
T2  
T6  
T12  
T13  
T14  
CK#  
CK  
ACTIVE n  
WRITE n  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Command  
t
RCD (MIN)  
DQS, DQS#  
AL = 5  
CWL = 6  
DI  
n
DI  
DI  
DI  
DQ  
n + 1  
n + 2  
n + 3  
WL = AL + CWL = 11  
Indicates break  
in time scale  
Transitioning Data  
Don’t Care  
AUTO SELF REFRESH (ASR)  
Mode register MR2[6] is used to disable/enable the ASR function. When ASR is disabled,  
the self refresh mode’s refresh rate is assumed to be at the normal 85°C limit (some-  
times referred to as 1x refresh rate). In the disabled mode, ASR requires the user to en-  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
145  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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