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MT250QL01GCBA1ESE0SATES 参数 Datasheet PDF下载

MT250QL01GCBA1ESE0SATES图片预览
型号: MT250QL01GCBA1ESE0SATES
PDF下载: 下载PDF文件 查看货源
内容描述: [3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase]
分类和应用:
文件页数/大小: 97 页 / 1038 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 3V Multiple I/O Serial Flash Memory  
Power-Up and Power-Down  
Figure 48: Power-Up Timing  
VCC  
VCC,max  
Chip selection not allowed  
VCC,min  
tVSL  
Chip  
reset  
Device fully accessible  
Polling allowed  
VWI  
Extended-SPI protocol  
Status register bit 0 = 1  
Flag status register bit 7 = 0  
Time  
1. tVSL polling has to be in extended-SPI protocol and STR mode.  
2. During tVSL period, HOLD# is enabled, RESET# disabled, and output strength is in de-  
fault setting.  
Notes:  
3. In a system that uses a fast VCC ramp rate, current design requires a minimum 100µs af-  
ter VCC reaches tVWI, and before the polling is allowed, even though VCC,min is achieved.  
4. In extended-SPI protocol, 1Gb and 2Gb device must wait 100µs after VCC reaches VCC,min  
before polling the status register or flag status register.  
Table 41: Power-Up Timing and VWI Threshold  
Note 1 applies to entire table  
Symbol  
tVSL  
Parameter  
Min  
Max  
300  
2.5  
Unit  
µs  
Notes  
2, 3  
2
VCC,min to device fully accessible  
Write inhibit voltage  
VWI  
1.5  
V
1. When VCC reaches VCC,min, to determine whether power-up initialization is complete,  
the host can poll status register bit 0 or flag status register bit 7 only in extended-SPI  
protocol because the device will accept commands only on DQ0 and output data only  
on DQ1. When the device is ready, the host has full access using the protocol configured  
in the nonvolatile configuration register. If the host cannot poll the status register in x1  
SPI mode, it is recommended to wait tVSL before accessing the device.  
Notes:  
2. Parameters listed are characterized only.  
3. On the first power-up after an event causing a subsector erase operation interrupt (for  
example, due to power-loss), the maximum time for tVSL will be up to 4.5ms in case of  
4KB subsector erase interrupt and up to 36ms in case of 32KB subsector erase interrupt;  
this accounts for erase recovery embedded operation.  
CCMTD-1725822587-3368  
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
82  
© 2014 Micron Technology, Inc. All rights reserved.  
 
 
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