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MT18VDDT3272AY-40B 参数 Datasheet PDF下载

MT18VDDT3272AY-40B图片预览
型号: MT18VDDT3272AY-40B
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR SDRAM UNBUFFERED DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 29 页 / 679 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT18VDDT3272AY-40B的Datasheet PDF文件第5页浏览型号MT18VDDT3272AY-40B的Datasheet PDF文件第6页浏览型号MT18VDDT3272AY-40B的Datasheet PDF文件第7页浏览型号MT18VDDT3272AY-40B的Datasheet PDF文件第8页浏览型号MT18VDDT3272AY-40B的Datasheet PDF文件第10页浏览型号MT18VDDT3272AY-40B的Datasheet PDF文件第11页浏览型号MT18VDDT3272AY-40B的Datasheet PDF文件第12页浏览型号MT18VDDT3272AY-40B的Datasheet PDF文件第13页  
256MB, 512MB, 1GB (x72, ECC, DR), PC3200  
184-PIN DDR SDRAM UDIMM  
Fig u re 5: CAS La t e n cy Dia g ra m  
Ta b le 6:  
Bu rst De fin it io n Ta b le  
T0  
T1  
T2  
T2n  
T3  
T3n  
STARTING  
COLUMN  
ADDRESS  
CK#  
CK  
BURST  
LENGTH  
ORDER OF ACCESSES WITHIN  
A BURST  
COMMAND  
READ  
NOP  
NOP  
NOP  
TYPE =  
TYPE =  
SEQUENTIAL INTERLEAVED  
CL = 3  
A0  
0
1
DQS  
DQ  
2
4
0-1  
1-0  
0-1  
1-0  
A1 A0  
0
0
1
1
0
1
0
1
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
T0  
T1  
T2  
T2n  
T3  
T3n  
CK#  
CK  
COMMAND  
READ  
NOP  
NOP  
NOP  
A2 A1 A0  
CL = 2  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6  
2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5  
3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2  
6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1  
7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0  
DQS  
DQ  
8
T0  
T1  
T2  
T2n  
T3  
T3n  
CK#  
CK  
COMMAND  
READ  
NOP  
NOP  
NOP  
CL = 2.5  
NOTE:  
DQS  
DQ  
1. For a burst length of two, A1-Ai select the two-data-ele-  
ment block; A0 selects the first access within the block.  
2. For a burst length of four, A2-Ai select the four-data-  
element block; A0-A1 select the first access within the  
block.  
Burst Length = 4 in the cases shown  
Shown with nominal AC, DQSCK, and DQSQ  
t
t
t
3. For a burst length of eight, A3-Ai select the eight-data-  
element block; A0-A2 select the first access within the  
block.  
TRANSITIONING DATA DON’T CARE  
4. Whenever a boundary of the block is reached within a  
given sequence above, the following access wraps  
within the block.  
Op e ra t in g Mo d e  
The normal operating mode is selected by issuing a  
MODE REGISTER SET command with bits A7A11 (for  
256MB), or A7A12 (512MB, 1GB) each set to zero, and  
bits A0A6 set to the desired values. A DLL reset is ini-  
tiated by issuing a MODE REGISTER SET command  
with bits A7 and A9A11 (256MB), or A7 and A9A12  
(512MB, 1GB) each set to zero, bit A8 set to one, and  
bits A0A6 set to the desired values. Although not  
required by the Micron device, JEDEC specifications  
recommend when a LOAD MODE REGISTER com-  
m and is issued to reset the DLL, it should always be  
followed by a LOAD MODE REGISTER com m and to  
select normal operating mode.  
5. i = 9 (256MB, 512MB);  
i = 9, 11 (1GB)  
Ta b le 7:  
CAS La t e n cy (CL) Ta b le  
ALLOWABLE OPERATING  
FREQUENCY (MHZ)  
SPEED  
CL = 2  
CL = 2.5  
CL = 3  
-40B  
75 f 133 75 f 167 125 f 200  
All other combinations of values for A7A11  
(256MB), or A7A12 (512MB, 1GB) are reserved for  
future use and/ or test modes. Test modes and  
pdf: 09005aef80814e61, source: 09005aef80a43eed  
DDA18C32_64_128x72AG.fm - Rev. E 9/04 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2004 Micron Technology, Inc.  
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