256MB, 512MB, 1GB (x72, ECC, DR), PC3200
184-PIN DDR SDRAM UDIMM
Ta b le 16: DDR SDRAM Co m p o n e n t Ele ct rica l Ch a ra ct e rist ics a n d
Re co m m e n d e d AC Op e ra t in g Co n d it io n s (Co n t in u e d )
Notes: 1–5, 8, 12–15, 29, 31; notes appear on pages 19–21; 0°C ≤ TA ≤ +70°C; VDD = VDDQ = +2.6V ±0.1V
AC CHARACTERISTICS
-40B
PARAMETER
SYMBOL
MIN
10
MAX
UNITS
NOTES
tRRD
tWPRE
tWPRES
tWPST
tWR
ns
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
tCK
ns
0.25
0
18, 19
17
DQS write preamble setup time
DQS write postamble
tCK
ns
0.4
15
0.6
Write recovery time
tWTR
na
tCK
ns
2
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
tQH -tDQSQ
140.6
22
21
256MB
µs
µs
512MB,
1GB
tREFC
tREFI
70.3
15.6
7.8
µs
µs
Average periodic refresh interval
256MB
21
512MB,
1GB
tVTD
tXSNR
tXSRD
0
ns
ns
Terminating voltage delay to VDD
75
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
tCK
200
pdf: 09005aef80814e61, source: 09005aef80a43eed
DDA18C32_64_128x72AG.fm - Rev. E 9/04 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc.
18
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