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MT16VDDT25664AY-262 参数 Datasheet PDF下载

MT16VDDT25664AY-262图片预览
型号: MT16VDDT25664AY-262
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR SDRAM UNBUFFERED DIMM]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 35 页 / 875 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT16VDDT25664AY-262的Datasheet PDF文件第23页浏览型号MT16VDDT25664AY-262的Datasheet PDF文件第24页浏览型号MT16VDDT25664AY-262的Datasheet PDF文件第25页浏览型号MT16VDDT25664AY-262的Datasheet PDF文件第26页浏览型号MT16VDDT25664AY-262的Datasheet PDF文件第28页浏览型号MT16VDDT25664AY-262的Datasheet PDF文件第29页浏览型号MT16VDDT25664AY-262的Datasheet PDF文件第30页浏览型号MT16VDDT25664AY-262的Datasheet PDF文件第31页  
256MB, 512MB, 1GB, 2GB (x64, DR)  
184-PIN DDR SDRAM UDIMM  
Ta b le 18: EEPROM De vice Se le ct Co d e  
The most significant bit (b7) is sent first  
DEVICE TYPE IDENTIFIER  
CHIP ENABLE  
b 2  
RW  
b 0  
SELECT CODE  
b 7  
b 6  
b 5  
b 4  
b 3  
b 1  
Memory Area Select Code (two arrays)  
Protection Register Select Code  
1
0
0
1
1
1
0
0
SA2  
SA2  
SA1  
SA1  
SA0  
SA0  
RW  
RW  
Ta b le 19: EEPROM Op e ra t in g Mo d e s  
MODE  
RW BIT  
WC  
BYTES INITIAL SEQUENCE  
1
0
1
1
0
0
VIH or VIL  
VIH or VIL  
VIH or VIL  
VIH or VIL  
VIL  
1
1
Current Address Read  
Random Address Read  
START, Device Select, RW = ‘1’  
START, Device Select, RW = ‘0, Address  
reSTART, Device Select, RW = ‘1’  
1
1  
1
Sequential Read  
Byte Write  
Similar to Current or Random Address Read  
START, Device Select, RW = ‘0’  
VIL  
16  
Page Write  
START, Device Select, RW = ‘0’  
Fig u re 16: SPD EEPROM Tim in g Dia g ra m  
t
t
t
F
HIGH  
R
t
LOW  
SCL  
t
t
t
t
t
SU:STO  
SU:STA  
HD:STA  
HD:DAT  
SU:DAT  
SDA IN  
t
t
t
DH  
AA  
BUF  
SDA OUT  
UNDEFINED  
pdf: 09005aef80739fa5, source: 09005aef807397e5  
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2004 Micron Technology, Inc.  
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