256MB, 512MB, 1GB, 2GB (x64, DR)
184-PIN DDR SDRAM UDIMM
Ta b le 23: Se ria l Pre se n ce -De t e ct Ma t rix (2GB)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 31
BYTE
DESCRIPTION
ENTRY (VERSION)
MT16VDDT25664A
0
1
2
3
4
5
6
7
8
9
128
80
08
07
0E
0B
02
40
00
04
Number of SPD Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
256
SDRAM DDR
14
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data Width
11
2
64
0
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time, tCK, (CAS Latency = 2.5) (See note
1)
SSTL 2.5V
6ns (-335)
7ns (-262/-26A)
7.5ns (-265)
60
70
75
SDRAM Access From Clock, tAC, (CAS Latency = 2.5)
10
0.7ns (-335)
0.75ns (-262/-26A/-265)
70
75
11
12
13
14
15
None
00
82
08
00
01
Module Configuration Type
15.62µs, 7.8µs/SELF
Refresh Rate/Type
8
SDRAM Device Width (Primary DDR SDRAM)
Error-Checking DDR SDRAM Data Width
None
1 clock
Minimum Clock Delay, Back-to-Back Random Column
Access
16
17
18
19
20
21
22
23
Burst Lengths Supported
Number of Banks on DDR SDRAM Device
CAS Latencies Supported
CS Latency
2, 4, 8
0E
04
0C
01
02
20
C0
4
2, 2.5
0
WE Latency
1
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time, tCK, (CAS Latency = 2)
Unbuffered/Diff. Clock
Fast/Concurrent AP
7.5ns (-335/-262/-26A)
10ns (-265)
75
A0
24
SDRAM Access From CK, tAC, (CAS Latency = 2)
0.7ns (-335)
0.75ns (-262/-26A/-265)
70
75
SDRAM Cycle Time, tCK, (CAS Latency = 1.5)
SDRAM Access From CK, tAC, (CAS Latency = 1.5)
Minimum Row Precharge Time, tRP (see note 4)
25
26
27
N/A
N/A
00
00
18ns (-335)
15ns (-262)
20ns (-26A/-265)
48
3C
50
Minimum Row Active to Row Active, tRRD
28
29
12ns (-335)
15ns (-262/-26A/-265)
30
3C
Minimum Ras# to CAS# Delay, tRCD (see note 4)
18ns (-335)
15ns (-262)
20ns (-26A/-265)
48
3C
50
t
30
42ns (-335)
45ns (-262/-26A/-265)
2A
2D
Minimum RAS# Pulse Width, RAS, (see note 2)
31
32
1GB
01
Module Rank Density
Address and Command Setup Time, tIS, (see note 3)
0.8ns (-335)
1.0ns (-262-26A/-265)
80
A0
pdf: 09005aef80739fa5, source: 09005aef807397e5
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc.
32
MICRON [ MICRON TECHNOLOGY ]
