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MT16VDDT6464AY-262 参数 Datasheet PDF下载

MT16VDDT6464AY-262图片预览
型号: MT16VDDT6464AY-262
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR SDRAM UNBUFFERED DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 35 页 / 875 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256MB, 512MB, 1GB, 2GB (x64, DR)  
184-PIN DDR SDRAM UDIMM  
41. The current Micron part operates below the slow-  
est JEDEC operating frequency of 83 MHz. As  
such, future die may not reflect this option.  
42. Random addressing changing and 50 percent of  
data changing at every transfer.  
address and control inputs to remain stable.  
Although IDD2F, IDD2N, and IDD2Q are similar,  
IDD2F is “worst case.”  
46. Whenever the operating frequency is altered, not  
including jitter, the DLL is required to be reset.  
This is followed by 200 clock cycles.  
47. Leakage num ber reflects the worst case leakage  
possible through the m odule pin, not what each  
memory device contributes.  
43. Random addressing changing and 100 percent of  
data changing at every transfer.  
44. CKE must be active (high) during the entire tim e a  
refresh command is executed. That is, from the  
tim e the AUTO REFRESH com m and is registered,  
CKE must be active at each rising clock edge, until  
tREF later.  
45. IDD2N specifies the DQ, DQS, and DM to be  
driven to a valid high or low logic level. IDD2Q is  
similar to IDD2F except IDD2Q specifies the  
48. When an input signal is HIGH or LOW, it is  
defined as a steady state logic HIGH or logic LOW.  
t
49. The -335 speed grade will operate with RAS (MIN)  
t
= 40ns and RAS (MAX) = 120,000ns at any slower  
frequency.  
pdf: 09005aef80739fa5, source: 09005aef807397e5  
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
23  
©2004 Micron Technology, Inc.  
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