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MT16VDDT3264AG-335 参数 Datasheet PDF下载

MT16VDDT3264AG-335图片预览
型号: MT16VDDT3264AG-335
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR SDRAM UNBUFFERED DIMM]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 35 页 / 875 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256MB, 512MB, 1GB, 2GB (x64, DR)  
184-PIN DDR SDRAM UDIMM  
In it ia liza t io n  
To ensure device operation the DRAM must be ini-  
tialized as described below:  
Fig u re 11: In it ia liza t io n Flo w Dia g ra m  
Step  
1. Simultaneously apply power to VDD and VDDQ.  
2. Apply VREF and then VTT power.  
3. Assert and hold CKE at a LVCMOS logic low.  
4. Provide stable CLOCK signals.  
1
2
V
DD and VDDQ Ramp  
Apply VREF and VTT  
5. Wait at least 200µs.  
6. Bring CKE high and provide at least one NOP or  
DESELECT command. At this point the CKE input  
changes from a LVCMOS input to a SSTL2 input  
only and will remain a SSTL_2 input unless a  
power cycle occurs.  
3
CKE must be LVCMOS Low  
4
Apply stable CLOCKs  
5
Wait at least 200us  
7. Perform a PRECHARGE ALL command.  
t
8. Wait at least RP time, during this time NOPs or  
6
Bring CKE High with a NOP command  
DESELECT commands must be given.  
9. Using the LMR command program the Extended  
Mode Register (E0 = 0 to enable the DLL and E1 =  
0 for norm al drive or E1 = 1 for reduced drive, E2  
through En must be set to 0; where n = most sig-  
nificant bit).  
7
PRECHARGE ALL  
t
8
Assert NOP or DESELECT for RP time  
t
10. Wait at least MRD time, only NOPs or DESELECT  
9
Configure Extended Mode Register  
commands are allowed.  
11. Using the LMR command program the Mode Reg-  
ister to set operating param eters and to reset the  
DLL. Note at least 200 clock cycles are required  
between a DLL reset and any READ com mand.  
t
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
Assert NOP or DESELECT for MRD time  
Configure Load Mode Register and reset DLL  
t
12. Wait at least MRD time, only NOPs or DESELECT  
commands are allowed.  
t
Assert NOP or DESELECT for MRD time  
13. Issue a PRECHARGE ALL command.  
t
14. Wait at least RP tim e, only NOPs or DESELECT  
PRECHARGE ALL  
commands are allowed.  
15. Issue an AUTO REFRESH comm and (Note this  
may be moved prior to step 13).  
t
Assert NOP or DESELECT for RP time  
t
16. Wait at least RFC time, only NOPs or DESELECT  
commands are allowed.  
Issue AUTO REFRESH command  
17. Issue an AUTO REFRESH comm and (Note this  
may be moved prior to step 13).  
t
Assert NOP or DESELECT commands for RFC  
t
18. Wait at least RFC time, only NOPs or DESELECT  
commands are allowed.  
Issue AUTO REFRESH command  
19. Although not required by the Micron device,  
JEDEC requires a LMR command to clear the DLL  
bit (set M8 = 0). If a LMR command is issued the  
same operating parameters should be utilized as  
in step 11.  
t
Assert NOP or DESELECT for RFC time  
Optional LMR command to clear DLL bit  
t
20. Wait at least MRD time, only NOPs or DESELECT  
t
commands are allowed.  
Assert NOP or DESELECT for MRD time  
21. At this point the DRAM is ready for any valid com-  
mand. Note 200 clock cycles are required between  
step 11 (DLL Reset) and any READ command.  
DRAM is ready for any valid command  
pdf: 09005aef80739fa5, source: 09005aef807397e5  
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2004 Micron Technology, Inc.  
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