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MT16VDDF6464HY-262 参数 Datasheet PDF下载

MT16VDDF6464HY-262图片预览
型号: MT16VDDF6464HY-262
PDF下载: 下载PDF文件 查看货源
内容描述: 小外形的DDR SDRAM DIMM [SMALL-OUTLINE DDR SDRAM DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 31 页 / 552 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512MB, 1GB (x64)  
200-PIN DDR SODIMM  
Commands  
The Truth Tables below provides a general reference  
of available commands. For a more detailed descrip-  
tion of commands and operations, refer to the 256Mb  
or 512Mb DDR SDRAM component data sheet.  
Table 8:  
Commands Truth Table  
CKE is HIGH for all commands shown except SELF REFRESH  
NAME (FUNCTION)  
CS# RAS# CAS# WE#  
ADDR  
NOTES  
H
L
L
L
L
L
L
L
L
X
H
L
X
H
H
L
X
H
H
H
L
X
X
1
1
DESELECT (NOP)  
NO OPERATION (NOP)  
Bank/Row  
Bank/Col  
Bank/Col  
X
2
ACTIVE (Select bank and activate row)  
READ (Select bank and column, and start READ burst)  
WRITE (Select bank and column, and start WRITE burst)  
BURST TERMINATE  
H
H
H
L
3
L
3
H
H
L
L
4
L
Code  
5
PRECHARGE (Deactivate row in bank or banks)  
AUTO REFRESH or SELF REFRESH (Enter self refresh mode)  
LOAD MODE REGISTER  
L
H
L
X
6, 7  
8
L
L
Op-Code  
NOTE:  
1. DESELECT and NOP are functionally interchangeable.  
2. BA0–BA1 provide device bank address and A0–A12 provide device row address.  
3. BA0–BA1 provide device bank address; A0–A9 (512MB) or A0–A9, A11 (1GB) provide device column address; A10 HIGH  
enables the auto precharge feature (nonpersistent), and A10 LOW disables the auto precharge feature.  
4. Applies only to read bursts with auto precharge disabled; this command is undefined (and should not be used) for READ  
bursts with auto precharge enabled and for WRITE bursts.  
5. A10 LOW: BA0-BA1 determine which device bank is precharged. A10 HIGH: all device banks are precharged and BA0–  
BA1 are “Don’t Care.”  
6. This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.  
7. Internal refresh counter controls device row addressing; all inputs and I/Os are “Don’t Care” except for CKE.  
8. BA0–BA1 select either the mode register or the extended mode register (BA0 = 0, BA1 = 0 select the mode register; BA0  
= 1, BA1 = 0 select extended mode register; other combinations of BA0-BA1 are reserved). A0–A12 provide the op-code  
to be written to the selected mode register.  
Table 9:  
DM Operation Truth Table  
Used to mask write data; provided coincident with the corresponding data  
NAME (FUNCTION)  
DM  
DQS  
L
Valid  
X
WRITE Enable  
WRITE Inhibit  
H
09005aef80a646bc  
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2003 Micron Technology, Inc.  
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