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MT16VDDF12864HG-26A 参数 Datasheet PDF下载

MT16VDDF12864HG-26A图片预览
型号: MT16VDDF12864HG-26A
PDF下载: 下载PDF文件 查看货源
内容描述: 小外形的DDR SDRAM DIMM [SMALL-OUTLINE DDR SDRAM DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 31 页 / 552 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT16VDDF12864HG-26A的Datasheet PDF文件第6页浏览型号MT16VDDF12864HG-26A的Datasheet PDF文件第7页浏览型号MT16VDDF12864HG-26A的Datasheet PDF文件第8页浏览型号MT16VDDF12864HG-26A的Datasheet PDF文件第9页浏览型号MT16VDDF12864HG-26A的Datasheet PDF文件第11页浏览型号MT16VDDF12864HG-26A的Datasheet PDF文件第12页浏览型号MT16VDDF12864HG-26A的Datasheet PDF文件第13页浏览型号MT16VDDF12864HG-26A的Datasheet PDF文件第14页  
512MB, 1GB (x64)  
200-PIN DDR SODIMM  
Figure 6: CAS Latency Diagram  
Table 6:  
Burst Definition Table  
T0  
T1  
T2  
T2n  
T3  
T3n  
ORDER OF ACCESSES WITHIN  
A BURST  
CK#  
CK  
STARTING  
COLUMN  
ADDRESS  
BURST  
LENGTH  
TYPE =  
TYPE =  
COMMAND  
READ  
NOP  
NOP  
NOP  
SEQUENTIAL INTERLEAVED  
CL = 2  
A0  
2
4
DQS  
DQ  
0
1
0-1  
1-0  
0-1  
1-0  
A1 A0  
T0  
T1  
T2  
T2n  
T3  
T3n  
0
0
1
1
0
1
0
1
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
CK#  
CK  
COMMAND  
READ  
NOP  
NOP  
NOP  
CL = 2.5  
A2 A1 A0  
DQS  
DQ  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6  
2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5  
3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2  
6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1  
7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0  
8
Burst Length = 4 in the cases shown  
Shown with nominal AC, DQSCK, and DQSQ  
t
t
t
TRANSITIONING DATA DON T CARE  
Operating Mode  
NOTE:  
The normal operating mode is selected by issuing a  
MODE REGISTER SET command with bits A7–A12  
each set to zero, and bits A0–A6 set to the desired val-  
ues. A DLL reset is initiated by issuing a MODE REGIS-  
TER SET command with bits A7 and A9–A12 each set  
to zero, bit A8 set to one, and bits A0–A6 set to the  
desired values. Although not required by the Micron  
device, JEDEC specifications recommend when a  
LOAD MODE REGISTER command is issued to reset  
the DLL, it should always be followed by a LOAD  
MODE REGISTER command to select normal operat-  
ing mode.  
1. For a burst length of two, A1-Ai select the two-data-ele-  
ment block; A0 selects the first access within the block.  
2. For a burst length of four, A2-Ai select the four-data-  
element block; A0-A1 select the first access within the  
block.  
3. For a burst length of eight, A3-Ai select the eight-data-  
element block; A0-A2 select the first access within the  
block.  
4. Whenever a boundary of the block is reached within a  
given sequence above, the following access wraps  
within the block.  
5. i = 9 (512MB);  
i = 9,11 (1GB)  
All other combinations of values for A7–A12 are  
reserved for future use and/or test modes. Test modes  
and reserved states should not be used because  
unknown operation or incompatibility with future ver-  
sions may result.  
Table 7:  
CAS Latency (CL) Table  
ALLOWABLE OPERATING  
CLOCK FREQUENCY (MHZ)  
Extended Mode Register  
SPEED  
CL = 2  
CL = 2.5  
The extended mode register controls functions  
beyond those controlled by the mode register; these  
additional functions are DLL enable/disable and out-  
put drive strength. These functions are controlled via  
the bits shown in Figure 7, Extended Mode Register  
Definition Diagram, on page 11. The extended mode  
register is programmed via the LOAD MODE REGIS-  
TER command to the mode register (with BA0 = 1 and  
-335  
-262  
-26A  
-265  
-202  
75 ? f ? 133  
75 ? f ? 133  
75 ? f ? 133  
75 ? f ? 100  
75 ? f ? 100  
75 ? f ? 167  
75 ? f ? 133  
75 ? f ? 133  
75 ? f ? 133  
75 ? f ? 125  
09005aef80a646bc  
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2003 Micron Technology, Inc.  
10