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MT16LSDT6464AG-13E 参数 Datasheet PDF下载

MT16LSDT6464AG-13E图片预览
型号: MT16LSDT6464AG-13E
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块 [SYNCHRONOUS DRAM MODULE]
分类和应用: 内存集成电路光电二极管动态存储器时钟
文件页数/大小: 24 页 / 609 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT16LSDT6464AG-13E的Datasheet PDF文件第8页浏览型号MT16LSDT6464AG-13E的Datasheet PDF文件第9页浏览型号MT16LSDT6464AG-13E的Datasheet PDF文件第10页浏览型号MT16LSDT6464AG-13E的Datasheet PDF文件第11页浏览型号MT16LSDT6464AG-13E的Datasheet PDF文件第13页浏览型号MT16LSDT6464AG-13E的Datasheet PDF文件第14页浏览型号MT16LSDT6464AG-13E的Datasheet PDF文件第15页浏览型号MT16LSDT6464AG-13E的Datasheet PDF文件第16页  
256MB / 512MB (x64)  
168-PIN SDRAM DIMMs  
Ab so lu t e Ma xim u m Ra t in g s  
Stresses greater than those listed m ay cause perm a-  
nent damage to the device. This is a stress rating only,  
and functional operation of the device at these or any  
other conditions above those indicated in the opera-  
tional sections of this specification is not implied.  
Exposure to absolute m axim um rating conditions for  
extended periods m ay affect reliability.  
Voltage on VDD, VDDQ Supply  
Relative to VSS. . . . . . . . . . . . . . . . . . . . . -1V to +4.6V  
Voltage on Inputs NC or I/ O Pins  
Storage Temperature (plastic) . . . . . .-55°C to +150°C  
Power Dissipation, 256MB . . . . . . . . . . . . . . . . . . . . 8W  
Power Dissipation, 512MB . . . . . . . . . . . . . . . . . . . 16W  
Relative to VSS. . . . . . . . . . . . . . . . . . . . -1V to +4.6V  
Operating Temperature  
TA (Commercial) . . . . . . . . . . . . . . . . .. 0°C to +70°C  
TA (Industrial). . . . . . . . . . . . . . . . . .. -40°C to +85°C  
Ta b le 10: DC Ele ct rica l Ch a ra ct e rist ics a n d Op e ra t in g Co n d it io n s – 256MB Mo d u le  
Notes: 1, 5, 6; notes appear on page 17; VDD, VDDQ = +3.3V ±0.3V  
PARAMETER/CONDITION  
SYMBOL  
MIN  
MAX  
UNITS  
NOTES  
VDD, VDDQ  
VIH  
3
2
3.6  
VDD + 0.3  
0.8  
V
V
SUPPLY VOLTAGE  
22  
22  
33  
INPUT HIGH VOLTAGE: Logic 1; All inputs  
INPUT LOW VOLTAGE: Logic 0; All inputs  
VIL  
-0.3  
-40  
V
40  
µA  
INPUT LEAKAGE CURRENT:  
Any input 0V ? VIN ? VDD  
Command and Address  
Inputs, CKE  
II  
(All other pins not under test = 0V)  
CK, S#  
-20  
-5  
20  
5
µA  
µA  
µA  
DQ, DQMB  
OUTPUT LEAKAGE CURRENT: DQ pins are disabled;  
IOZ  
-5  
5
33  
0V ? VOUT ? VDDQ  
VOH  
VOL  
2.4  
V
V
OUTPUT LEVELS:  
Output High Voltage (IOUT = -4mA)  
Output Low Voltage (IOUT = 4mA)  
0.4  
Ta b le 11: DC Ele ct rica l Ch a ra ct e rist ics a n d Op e ra t in g Co n d it io n s – 512MB Mo d u le  
Notes: 1, 5, 6; notes appear on page 17; VDD, VDDQ = +3.3V ±0.3V  
PARAMETER/CONDITION  
SYMBOL  
MIN  
MAX  
UNITS  
NOTES  
SUPPLY VOLTAGE  
VDD, VDDQ  
VIH  
3
2
3.6  
VDD + 0.3  
0.8  
V
V
INPUT HIGH VOLTAGE: Logic 1; All inputs  
INPUT LOW VOLTAGE: Logic 0; All inputs  
22  
22  
33  
VIL  
-0.3  
-80  
V
INPUT LEAKAGE CURRENT:  
Any input 0V ? VIN ? VDD  
Command and Address  
Inputs, CKE  
80  
µA  
II  
(All other pins not under test = 0V)  
-20  
-10  
-10  
20  
10  
10  
µA  
µA  
µA  
CK, S#  
DQ, DQMB  
IOZ  
33  
OUTPUT LEAKAGE CURRENT: DQ pins are disabled;  
0V ? VOUT ? VDDQ  
VOH  
VOL  
2.4  
V
V
OUTPUT LEVELS:  
Output High Voltage (IOUT = -4mA)  
Output Low Voltage (IOUT = 4mA)  
0.4  
32,64 Meg x 64 SDRAM DIMMs  
SD8_16C32_64x64AG_C.fm - Rev. C 11/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2002, Micron Technology Inc.  
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