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MT16LSDT6464AG-13E 参数 Datasheet PDF下载

MT16LSDT6464AG-13E图片预览
型号: MT16LSDT6464AG-13E
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块 [SYNCHRONOUS DRAM MODULE]
分类和应用: 内存集成电路光电二极管动态存储器时钟
文件页数/大小: 24 页 / 609 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256MB / 512MB (x64)
168-PIN SDRAM DIMMs
SYNCHRONOUS
DRAM MODULE
Features
• PC100- and PC133-compliant
• JEDEC-standard 168-pin, dual in-line memory
module (DIMM)
• Unbuffered
• 256MB (32 Meg x 64), 512MB (64 Meg x 64)
• Single +3.3V ±0.3V power supply
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal SDRAM banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto Precharge, including Concurrent Auto
Precharge, and Auto Refresh Modes
• 64ms, 8,192 cycle Auto Refresh cycle
• Self Refresh Mode
• LVTTL-compatible inputs and outputs
• Serial Presence-Detect (SPD)
MT8LSDT3264A(I) - 256MB
MT16LSDT6464A(I) - 512MB
For the latest data sheet, please refer to the Micron Web
site:
Figure 1: 168-Pin DIMM (MO–161)
Standard
Low Profile
OPTIONS
• Package
Unbuffered
168-pin DIMM (gold)
• Operating Temperature Range
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
1
• Memory Clock/CAS Latency
(133 MHz)/CL = 2
(133 MHz)/CL = 3
(100 MHz)/CL = 2
NOTE:
MARKING
A
G
None
I
-13E
-133
-10E
Table 2:
MODULE
MARKINGS
-13E
-133
-10E
Timing parameters
PC100
CL -
t
RCD -
t
RP
2-2-2
2-2-2
2-2-2
PC133
CL -
t
RCD -
t
RP
2-2-2
3-3-3
NA
Table 3:
Part Numbers
SYSTEM
CONFIGURATION BUS SPEED
32 Meg x 64
32 Meg x 64
32 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
133 MHz
133 MHz
100 MHz
133 MHz
133 MHz
100 MHz
PARTNUMBER
1
MT8LSDT3264AG-13E_
MT8LSDT3264AG(I)-133_
MT8LSDT3264AG-10E_
MT16LSDT6464AG-13E_
MT16LSDT6464AG(I)-133_
MT16LSDT6464AG-10E_
NOTE:
1. Consult Micron for availability; Industrial Tempera-
ture Option available in -133 speed only.
Table 1:
Address Table
256MB
MODULE
8K
4 (BA0, BA1)
32 Meg x 8
8K (A0–A12)
1K (A0–A9)
1 (S0,S2)
512MB
MODULE
8K
4 (BA0, BA1)
32 Meg x 8
8K (A0–A12)
1K (A0–A9)
2 (S0,S2; S1,S3)
Refresh Count
Device Banks
Device Configuration
Row Addressing
Column Addressing
Module Banks
1. The designators for component and PCB revision
are the last two characters of each part number.
Consult factory for current revision codes. Example:
MT8LSDT3264AG-133B1.
32,64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_C.fm - Rev. C 11/02
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.