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MT16LSDT6464AG-133 参数 Datasheet PDF下载

MT16LSDT6464AG-133图片预览
型号: MT16LSDT6464AG-133
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块 [SYNCHRONOUS DRAM MODULE]
分类和应用: 动态存储器
文件页数/大小: 24 页 / 609 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256MB / 512MB (x64)  
168-PIN SDRAM DIMMs  
Ta b le 6:  
Pin De scrip t io n s  
Pin numbers may not correlate with symbols. Refer to the Pin Assignment table for pin number and symbol information.  
PIN NUMBERS  
SYMBOL  
TYPE DESCRIPTION  
27, 111, 115  
RAS#, CAS#,  
WE#  
Input  
Command Inputs: RAS#, CAS#, and WE# (along with S#)  
define the command being entered.  
42, 79, 125, 163  
63, 128  
CK0-CK3  
Input  
Clock: CK is driven by the system clock. All SDRAM input  
signals are sampled on the positive edge of CK. CK also  
increments the internal burst counter and controls the output  
registers.  
CKE0, CKE1  
Input  
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the  
CK signal. Deactivating the clock provides PRECHARGE  
POWER-DOWN and SELF REFRESH operation (all device banks  
idle) or CLOCK SUSPEND OPERATION (burst access in  
progress). CKE is synchronous except after the device enters  
power- down and self refresh modes, where CKE becomes  
asynchronous until after exiting the same mode. The input  
buffers, including CK, are disabled during power-down and  
self refresh modes, providing low standby power.  
30, 45,114, 129  
S0# -S3#  
Input  
Input  
Chip Select: S# enables (registered LOW) and disables  
(registered HIGH) the command decoder. All commands are  
masked when S# is registered HIGH. S# is considered part of  
the command code.  
28, 29, 46, 47, 112, 113, 130, DQMB0-DQMB7  
131  
Input/Output Mask: DQMB is an input mask signal for write  
accesses and an output enable signal for read accesses. Input  
data is masked when DQMB is sampled HIGH during a WRITE  
cycle. The output buffers are placed in a High-Z state (two-  
clock latency) when DQMB is sampled HIGH during a READ  
cycle.  
39, 122  
BA0, BA1  
A0-A12  
Input  
Input  
Bank Address: BA0 and BA1 define to which device bank the  
ACTIVE, READ, WRITE, or PRECHARGE command is being  
applied.  
33 - 38, 117 - 121, 123, 126  
Address Inputs: Provide the row address for ACTIVE  
commands, and the column address and auto prcharge bit  
(A10) for READ/WRITE commands, to select one location out  
of the memory arrary in the respective device bank. A10  
sampled during a PRECHARGE command determines whether  
the PRECHARGE applies to one device bank (A10 LOW, device  
bank selected by BA0, BA1) or all device banks (A10 HIGH).  
The address inputs also provide the op-code during a MODE  
REGISTER SET command.  
83  
SCL  
Input  
Input  
Serial Clock for Presence-Detect: SCL is used to synchronize  
the presence-detect data transfer to and from the module.  
165-167  
SA0-SA2  
DQ0-DQ63  
Presence-Detect Address Inputs: These pins are used to  
configure the presence-detect device.  
2-5, 7-11, 13-17, 19-20, 55-58,  
60, 65-67, 69-72, 74-77, 86-89,  
91-95, 97-101, 103-104,  
139-142, 144, 149-151,  
153-156,158-161  
Input/  
Output  
Data I/O: Data bus.  
82  
SDA  
Input/  
Output  
Serial Presence-Detect Data: SDA is a bidirectional pin used to  
transfer addresses and data into and out of the presence-  
detect portion of the module.  
32,64 Meg x 64 SDRAM DIMMs  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
SD8_16C32_64x64AG_C.fm - Rev. C 11/02  
3
©2002, Micron Technology Inc.  
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