256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
Absolute Maximum Ratings
Stresses greater than those listed may cause perma-
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Voltage on VDD Supply,
Operating Temperature,
Relative to VSS . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
T
(Commercial - ambient) . . . . . .0°C to +65°C
OPR
Storage Temperature (plastic) . . . . . .-55°C to +125°C
Short Circuit Output Current. . . . . . . . . . . . . . . . 50mA
Relative to VSS . . . . . . . . . . . . . . . . . . . -1V to +4.6V
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 16; VDD, VDDQ = +3.3V 0.3V
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS NOTES
VDD, VDDQ
3
2
3.6
VDD + 0.3
0.8
V
Supply voltage
VIH
VIL
II
V
V
22
22
33
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
–0.3
µA
Input leakage current:
Any input 0V ≤ VIN ≤ VDD
(All other pins not under test = 0V)
Command and
Address Inputs
–80
–40
–10
–10
80
40
10
10
CK, CKE, S#
DQMB
IOZ
µA
33
Output leakage current: DQ pins are disabled; DQ
0V ≤ VOUT ≤ VDDQ
VOH
VOL
2.4
–
–
V
V
Output levels:
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
0.4
Table 11: IDD Specifications and Conditions – 256MB
Notes: 1, 5, 6, 11, 13; SDRAM components only; notes appear on page 16; VDD, VDDQ = +3.3V 0.3V
MAX
PARAMETER/CONDITION
SYMBOL
-13E -133 -10E UNITS
NOTES
IDD1a
1,296 1,216 1,136
mA
3, 17, 19, 32
Operating current: Active mode; Burst = 2; READ or WRITE;
tRC = tRC (MIN)
IDD2b
IDD3a
32
32
32
mA
mA
32
Standby current: Power-down mode; All device banks idle;
CKE = LOW
416
416
336
3, 12, 19, 32
Standby current: Active mode;
CKE = HIGH; CS# = HIGH; All device banks active after tRCD
met; No accesses in progress
IDD4a
1,336 1,216 1,136
5,280 4,960 4,320
mA
3, 18, 19, 32
Operating current: Burst mode; Continuous burst; READ or
WRITE; All device banks active
IDD5b
IDD6b
IDD7b
IDD7b
tRFC = tRFC (MIN)
tRFC = 15.625µs
mA
mA
mA
mA
3, 12, 18, 19,
32,30
Auto refresh current
CKE = HIGH; S# = HIGH
48
32
16
48
32
16
48
32
16
4
Self refresh current: CKE ≤ 0.2V
Standard
Low power (L)
a - Value calculated as one module rank in this operating condition, and all other ranks in power-down mode.
b - Value calculated reflects all module ranks in this operation condition.
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
12
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