256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
Table 12: IDD Specifications and Conditions – 512MB
Notes: 1, 5, 6, 11, 13; SDRAM components only; notes appear on page 16; VDD, VDDQ = +3.3V 0.3V
MAX
PARAMETER/CONDITION
SYMBOL
-13E -133 -10E UNITS
NOTES
IDD1a
1,096 1,016 1,016
mA
mA
mA
3, 17,19, 32
Operating current: Active mode; Burst = 2; READ or WRITE;
tRC = tRC (MIN)
IDD2b
IDD3a
32
32
32
32
Standby current: Power-down mode; All device banks idle;
CKE = LOW
336
336
336
3, 12, 19, 32
STANDBY CURRENT: Active mode;
CKE = HIGH; CS# = HIGH; All device banks active after tRCD
met; No accesses in progress
IDD4a
1,096 1,096 1,096
4,560 4,320 4,320
mA
3, 18, 19, 32
OPERATING CURRENT: Burst mode; Continuous burst; READ
or WRITE; All device banks active
Auto refresh current
CKE = HIGH; S# = HIGH
tRFC = tRFC (MIN)
tRFC = 7.8125µs
Standard
IDD5b
IDD6b
IDD7b
IDD7b
mA
mA
mA
mA
3, 12, 18, 19,
32,30
56
40
24
56
40
24
56
40
24
4
Self refresh current: CKE < 0.2V
Low power (L)
a - Value calculated as one module rank in this operating condition, and all other ranks in power-down mode.
b - Value calculated reflects all module ranks in this operation condition.
Table 13: Capacitance
Note 2; notes appear on page 16
PARAMETER
SYMBOL
MIN
MAX
UNITS
CI1
CI2
CI3
CI4
CIO
40
20
20
5
60.8
28
pF
pF
pF
pF
pF
Input capacitance: Address and command
Input capacitance: CK
30.4
7.6
12
Input capacitance: CKE, S#
Input capacitance: DQMB
8
Input/output capacitance: DQ
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
13
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