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MT16LSDF3264LHG-10E 参数 Datasheet PDF下载

MT16LSDF3264LHG-10E图片预览
型号: MT16LSDF3264LHG-10E
PDF下载: 下载PDF文件 查看货源
内容描述: 小外形SDRAM模块 [SMALL-OUTLINE SDRAM MODULE]
分类和应用: 动态存储器
文件页数/大小: 22 页 / 476 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256MB, 512MB (x64, DR)  
144-PIN SDRAM SODIMM  
Operating Mode  
Table 8:  
CL Table  
The normal operating mode is selected by setting  
M7 and M8 to zero; the other combinations of values  
for M7 and M8 are reserved for future use and/or test  
modes. The programmed burst length applies to both  
READ and WRITE bursts.  
Test modes and reserved states should not be used  
because unknown operation or incompatibility with  
future versions may result.  
ALLOWABLE OPERATING  
CLOCK FREQUENCY (MHz)  
SPEED  
CL = 2  
CL = 3  
-13E  
-133  
-10E  
133  
100  
100  
< 143  
< 133  
NA  
Write Burst Mode  
When M9 = 0, the burst length programmed via M0-  
M2 applies to both READ and WRITE bursts; when  
M9 = 1, the programmed burst length applies to READ  
bursts, but write accesses are single-location (non-  
burst) accesses.  
pdf: 09005aef807924d2, source: 09005aef807924f1  
SDF16C32_64x64HG.fm - Rev. E 4/06 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2006 Micron Technology, Inc. All rights reserved.  
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