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M58BW016FB 参数 Datasheet PDF下载

M58BW016FB图片预览
型号: M58BW016FB
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 512千位×32 ,引导块,爆) [16 Mbit (512 Kbit x 32, boot block, burst)]
分类和应用:
文件页数/大小: 70 页 / 1283 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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DC and AC parameters  
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB  
Table 15. DC characteristics  
Symbol  
Parameter  
Test condition  
Min  
Max  
Unit  
I
Input Leakage current  
Output Leakage current  
0 VV V  
±1  
±5  
20  
25  
µA  
µA  
LI  
IN  
DDQ  
I
0 V  
V
V  
OUT DDQ  
LO  
M58BW016DT/B  
M58BW016FT/B  
E = V ,G = V ,  
IL  
IH  
I
Supply current (Random Read)  
Supply current (Power-up)  
mA  
mA  
mA  
DD  
f
= 6 MHz  
add  
applies only to  
M58BW016FT/B  
(1)  
DDP-UP  
I
E = V  
20  
30  
IH  
M58BW016DT/B  
M58BW016FT/B  
M58BW016DT/B  
M58BW016FT/B  
M58BW016DT/B  
M58BW016FT/B  
E = V ,G = V ,  
IL  
IH  
f
= 40 MHz  
clock  
I
Supply current (Burst Read)  
Supply current (Standby)  
DDB  
30  
40  
mA  
mA  
µA  
E = V ,G = V ,  
IL  
IH  
f
= 56 MHz  
clock  
60  
E = RP = V  
0.2 V  
±
DD  
150  
µA  
I
DD1  
E = V ± 0.2 V,  
SS  
Supply current (Auto Low-Power)  
Supply current (Reset/Power-down)  
60  
60  
30  
µA  
µA  
RP = V ± 0.2 V  
DD  
I
I
RP = V ± 0.2 V  
DD2  
DD3  
SS  
Supply current (Program or Erase,  
Set Lock bit, Erase Lock bit)  
Program, Block Erase in progress  
M58BW016DT/B  
mA  
40  
150  
± 30  
± 30  
± 5  
µA  
µA  
µA  
µA  
µA  
µA  
mA  
µA  
mA  
V
Supply current  
(Erase/Program Suspend)  
I
E = V  
IH  
DD4  
M58BW016FT/B  
I
Program current (Read or Standby)  
Program current (Read or Standby)  
Program current (Power-down)  
V
V  
PP  
PP  
PP  
PP1  
PP1  
I
I
V
V  
PP1  
PP2  
RP = V  
IL  
V
= V  
= V  
= V  
= V  
200  
20  
Program current (Program)  
Program in progress  
PP  
PP  
PP1  
PPH  
PP1  
PPH  
I
I
PP3  
PP4  
V
V
200  
20  
Program current (Erase) Erase in  
progress  
PP  
PP  
V
V
Input Low voltage  
–0.5  
0.2V  
DDQIN  
IL  
V
Input High voltage (for DQ lines)  
0.8V  
V +0.3  
DDQ  
V
IH  
DDQIN  
DDQIN  
Input High voltage (for input only  
lines)  
V
0.8V  
3.6  
V
IH  
V
Output Low voltage  
I
= 100 µA  
0.1  
V
V
OL  
OL  
V
Output High voltage CMOS  
I
= –100 µA  
V
–0.1  
DDQ  
OH  
OH  
Program voltage  
(program or erase operations)  
V
2.7  
11.4  
3.6  
12.6  
2.2  
V
V
V
V
PP1  
PPH  
LKO  
Program voltage  
(program or erase operations)  
V
V
V
supply voltage (erase and  
DD  
program lockout)  
V
supply voltage (erase and  
PP  
V
I
11.4  
PPLK  
program lockout)  
1.  
is defined only during the power-up phase of the M58BW016FT/B, from the moment current is applied with RP Low  
to the moment when the supply voltage has become stable and RP is brought to High.  
DDP-UP  
40/70  
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