M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Common Flash interface (CFI)
Table 28. CFI - device voltage and timing specification
Address A0-A18
Data
Description
(1)
1Bh
1Ch
1Dh
1Eh
27h
36h
B4h
V
V
V
V
min, 2.7 V
max, 3.6 V
min
DD
DD
PP
PP
(1)
(2)
(2)
C6h
04h
max
n
1Fh
2 ms typical time-out for Word, DWord prog – not available
n
20h
00h
2 ms, typical time-out for max buffer write – not available
n
21h
0Ah
2 ms, typical time-out for Erase Block
n
22h
00h
2 ms, typical time-out for chip erase – not available
23h-24h
25h
Reserved
04h
n
2 x typical for individual block erase time-out maximum
n
26h
00h
2 x typical for chip erase max time-out – not available
1. Bits are coded in binary code decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in hexadecimal and scaled in Volts while bit3 to bit0 are in binary code decimal and
scaled in 100 mV.
Table 29. Device geometry definition
Address A0-A18
Data
Description
n
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
15h
03h
00h
00h
00h
02h
1Eh
00h
00h
01h
07h
00h
20h
00h
2 number of bytes memory size
Device interface sync./async.
Organization sync./async.
n
Page size in bytes, 2
Bit7-0 = number of erase block regions in device
Number (n-1) of blocks of identical size; n=31
Erase block region information x 256 bytes per erase block
(64 Kbytes)
Number (n-1) of blocks of identical size; n=8
Erase block region information x 256 bytes per erase block
(8 Kbytes)
57/70
MICRON [ MICRON TECHNOLOGY ]
