256Mb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Write AC Characteristics
Table 29: WE#-Controlled Write AC Characteristics
80ns
VCCQ = 1.65V
to VCC
60ns2
VCCQ = VCC
70ns
VCCQ = VCC
Parameter
Symbol
Unit
Notes
Legacy
JEDEC
Min
Max
Min
Max
Min
Max
Address valid to next address
valid
tWC
tAVAV
65
–
75
–
85
–
ns
CE# LOW to WE# LOW
tCS
tWP
tDS
tDH
tCH
tWPH
tAS
tAH
tELWL
tWLWH
tDVWH
tWHDX
tWHEH
tWHWL
tAVWL
tWLAX
0
35
45
0
–
–
–
–
–
–
–
–
0
35
45
0
–
–
–
–
–
–
–
–
0
35
45
0
–
–
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
ns
ns
WE# LOW to WE# HIGH
Input valid to WE# HIGH
WE# HIGH to input transition
WE# HIGH to CE# HIGH
WE# HIGH to WE# LOW
Address valid to WE# LOW
2
0
0
0
30
0
30
0
30
0
WE# LOW to address transi-
tion
45
45
45
OE# HIGH to WE# LOW
WE# HIGH to OE# LOW
–
tGHWL
tWHGL
tWHRL
0
0
–
–
–
0
0
–
–
–
0
0
–
–
–
ns
ns
ns
tOEH
tBUSY
Program/erase valid to
RY/BY# LOW
30
30
30
3
VCC HIGH to CE# LOW
Notes:
tVCS
tVCHEL
50
–
50
–
50
–
µs
1. The 60ns device is available upon customer request.
2. The user's write timing must comply with this specification. Any violation of this write
timing specification may result in permanent damage to the NOR Flash device.
3. Sampled only; not 100% tested.
PDF: 09005aef84bd3b68
m29w_256mb.pdf - Rev. B 5/13 EN
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76
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