256Mb: 3V Embedded Parallel NOR Flash
DC Characteristics
DC Characteristics
Table 26: DC Current Characteristics
Parameter
Symbol
Conditions
0V ≤ VIN ≤ VCC
0V ≤ VOUT ≤ VCC
Min
Typ
Max
±1
Unit Notes
Input leakage current
Output leakage current
ILI
–
–
–
–
–
–
µA
µA
1
ILO
±1
VCC read
current
Random read
ICC1
CE# = VIL, OE# = VIH,
10
mA
f = 6 MHz
Page read
CE# = VIL, OE# = VIH,
–
–
1
mA
f = 10 MHz
VCC standby
current
Grade 6
Grade 3
ICC2
CE# = VCCQ ±0.2V,
RST# = VCCQ ±0.2V
–
–
–
–
–
–
100
200
20
µA
µA
2
2
3
VCC program/erase current
ICC3
Program/
erase
VPP/WP# = VIL
or VIH
mA
controller
active
VPP/WP# =
VPPH
–
–
15
mA
VPP current
Read
IPP1
VPP/WP# ≤ VCC
–
–
–
–
–
–
–
1
1
1
1
1
3
1
5
5
µA
µA
Standby
Reset
IPP2
IPP3
RST# = VSS ±0.2V
VPP/WP# = 12V ±5%
VPP/WP# = VCC
5
µA
PROGRAM operation
ongoing
10
5
mA
mA
mA
mA
ERASE operation
ongoing
IPP4
VPP/WP# = 12V ±5%
VPP/WP# = VCC
10
5
1. The maximum input leakage current is ±5µA on the VPP/WP# pin.
2. When the bus is inactive for tAVQV +30ns or more, the memory enters automatic stand-
by.
Notes:
3. Sampled only; not 100% tested.
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m29w_256mb.pdf - Rev. B 5/13 EN
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