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M29W256GL 参数 Datasheet PDF下载

M29W256GL图片预览
型号: M29W256GL
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 89 页 / 1158 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Protection Operations  
In extended memory block mode, ERASE, CHIP ERASE, ERASE SUSPEND, and ERASE  
RESUME commands are not allowed. The extended memory block cannot be erased,  
and each bit of the extended memory block can only be programmed once.  
The extended memory block is protected from further modification by programming  
lock register bit 0. Once invoked, this protection cannot be undone.  
The device remains in extended memory block mode until the EXIT EXTENDED MEM-  
ORY BLOCK (90/00h) command is issued, which returns the device to read mode, or  
until power is removed from the device. After a power-up sequence or hardware reset,  
the device will revert to reading memory blocks in the main array.  
EXIT PROTECTION Command  
The EXIT PROTECTION COMMAND SET (90/00h) command is used to exit the lock  
register, password protection, nonvolatile protection, volatile protection, and nonvola-  
tile protection bit lock bit command set modes and return the device to read mode.  
PDF: 09005aef84bd3b68  
m29w_256mb.pdf - Rev. B 5/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.