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M29W256GH70N3E 参数 Datasheet PDF下载

M29W256GH70N3E图片预览
型号: M29W256GH70N3E
PDF下载: 下载PDF文件 查看货源
内容描述: [Parallel NOR Flash Embedded Memory]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 76 页 / 992 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号M29W256GH70N3E的Datasheet PDF文件第34页浏览型号M29W256GH70N3E的Datasheet PDF文件第35页浏览型号M29W256GH70N3E的Datasheet PDF文件第36页浏览型号M29W256GH70N3E的Datasheet PDF文件第37页浏览型号M29W256GH70N3E的Datasheet PDF文件第39页浏览型号M29W256GH70N3E的Datasheet PDF文件第40页浏览型号M29W256GH70N3E的Datasheet PDF文件第41页浏览型号M29W256GH70N3E的Datasheet PDF文件第42页  
256Mb: 3V Embedded Parallel NOR Flash  
Erase Operations  
It is also possible to issue AUTO SELECT and UNLOCK BYPASS commands during an  
ERASE SUSPEND operation. The READ/RESET command must be issued to return the  
device to read array mode before the RESUME command will be accepted.  
During an ERASE SUSPEND operation, a bus READ operation to the extended memory  
block will output the extended memory block data. After the device enters extended  
memory block mode, the EXIT EXTENDED MEMORY BLOCK command must be issued  
before the ERASE operation can be resumed.  
An ERASE SUSPEND command is ignored if it is written during a CHIP ERASE opera-  
tion.  
If the ERASE SUSPEND operation is aborted by performing a device reset or power-  
down, data integrity cannot be ensured, and the suspended blocks should be erased  
again.  
ERASE RESUME Command  
The ERASE RESUME (30h) command restarts the program/erase controller after an  
ERASE SUSPEND operation.  
The device must be in read array mode before the RESUME command will be accepted.  
An erase can be suspended and resumed more than once.  
PDF: 09005aef84bd3b68  
m29w_256mb.pdf - Rev. C 7/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.  
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