128Mb 3V Embedded Parallel NOR Flash
DC Characteristics
DC Characteristics
Table 26: DC Current Characteristics
Parameter
Symbol
Conditions
0V ≤ VIN ≤ VCC
0V ≤ VOUT ≤ VCC
Min
Typ
Max Unit Notes
Input leakage current
Output leakage current
ILI
–
–
–
–
–
–
±1
±1
10
µA
µA
1
ILO
VCC read
current
Random read
ICC1
CE# = VIL, OE# = VIH,
mA
f = 6 MHz
Page read
CE# = VIL, OE# = VIH,
–
–
15
mA
f = 10 MHz
VCC standby
current
Grade 6
Grade 3
ICC2
CE# = VCCQ ±0.2V
–
–
–
–
–
–
100
200
20
µA
µA
2
2
3
VCC program/erase current
ICC3
Program/
erase
VPP/WP# = VIL
mA
or VIH
controller
active
VPP/WP# =
VPPH
–
–
–
20
5
mA
µA
VPP program Read or standby
current (pro- Standby
IPP1
VPP/WP# ≤ VCC
1
gram)
Reset
IPP2
IPP3
RST# = VSS ±0.2V
VPP/WP# = 12V ±5%
VPP/WP# = VCC
–
–
–
1
1
1
5
10
5
µA
mA
µA
PROGRAM opera-
tion
ongoing
VPP program ERASE operation
current (erase) ongoing
IPP4
VPP/WP# = 12V ±5%
VPP/WP# = VCC
–
–
3
1
10
5
mA
µA
1. The maximum input leakage current is ±5µA on the VPP/WP# pin.
2. When the bus is inactive for tAVQV +30ns or more, the memory enters automatic stand-
by.
Notes:
3. Sampled only; not 100% tested.
PDF: 09005aef84daa141
m29w_128mb.pdf - Rev. A 7/13 EN
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