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M29W128GH 参数 Datasheet PDF下载

M29W128GH图片预览
型号: M29W128GH
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 76 页 / 841 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb 3V Embedded Parallel NOR Flash  
Program Operations  
1. The BUFFERED PROGRAM ABORT AND RESET command must be issued to return the de-  
vice to read mode.  
Notes:  
2. When the block address is specified, all addresses in the selected block address space  
must be issued starting from 00h. Furthermore, when loading the write buffer address  
with data, data program addresses must be consecutive.  
3. DQ7 must be checked since DQ5 and DQ7 may change simultaneously.  
4. If this flowchart location is reached because DQ5 = 1, then the ENHANCED WRITE TO  
BUFFER PROGRAM command failed. If this flowchart location is reached because DQ1 =  
1, then the ENHANCED WRITE TO BUFFER PROGRAM command aborted. In both cases,  
the appropriate RESET command must be issued to return the device to read mode: A  
RESET command if the operation failed; a WRITE TO BUFFER PROGRAM ABORT AND RE-  
SET command if the operation aborted.  
PDF: 09005aef84daa141  
m29w_128mb.pdf - Rev. A 7/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2012 Micron Technology, Inc. All rights reserved.  
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