M29F200BT
M29F200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Single Supply Flash Memory
Features
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Single 5V±10% supply voltage for Program,
Erase and Read operations
Access time: 45, 50, 70, 90ns
Programming time
– 8µs per Byte/Word typical
7 memory blocks
– 1 Boot Block (Top or Bottom location)
– 2 parameter and 4 main blocks
Program/Erase controller
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase
algorithm
– Status Register polling and toggle bits
– Ready/Busy output pin
Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
Temporary Block Unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
20 years data retention
– Defectivity below 1 ppm/year
Electronic Signature
– Manufacturer code: 0020h
– Top Device code M29F200BT: 00D3h
– Bottom Device code: M29F200BB: 00D4h
ECOPACK
®
packages available
TSOP48 (N)
12 x 20mm
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SO44 (M)
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March 2007
Rev 5
1/39
1
MICRON [ MICRON TECHNOLOGY ]
