256Mb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Write AC Characteristics
Table 36: WE#-Controlled Write AC Characteristics
80ns
70ns
VCCQ = VCC
VCCQ = 1.65V to
VCC
Parameter
Symbol
Legacy
tWC
tCS
Unit
Notes
JEDEC
tAVAV
tELWL
Min
70
0
Max
Min
80
0
Max
Address valid to next address valid
CE# LOW to WE# LOW
–
–
–
–
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WE# LOW to WE# HIGH
Input valid to WE# HIGH
WE# HIGH to input transition
WE# HIGH to CE# HIGH
tWP
tDS
tDH
tCH
tWPH
tAS
tAH
tWLWH
tDVWH
tWHDX
tWHEH
tWHWL
tAVWL
tWLAX
tGHWL
tWHGL
tWHRL
35
45
0
–
35
45
0
–
–
–
–
–
0
–
0
–
WE# HIGH to WE# LOW
Address valid to WE# LOW
WE# LOW to address transition
OE# HIGH to WE# LOW
30
0
–
30
0
–
–
–
45
0
–
45
0
–
–
–
–
WE# HIGH to OE# LOW
tOEH
tBUSY
0
–
0
–
Program/erase valid to RY/BY#
LOW
–
30
–
30
1
VCC HIGH to CE# LOW
tVCS
tVCHEL
50
–
50
–
µs
1. Sampled only; not 100% tested.
Note:
PDF: 09005aef84ecabef
m29dw_256g.pdf - Rev. A 10/12 EN
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