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M29DW256G 参数 Datasheet PDF下载

M29DW256G图片预览
型号: M29DW256G
PDF下载: 下载PDF文件 查看货源
内容描述: [Micron Parallel NOR Flash Embedded Memory]
分类和应用:
文件页数/大小: 78 页 / 1023 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Program Operations  
When reprogramming data in a portion of memory already programmed (changing  
programmed data from '0' to '1') operation failure can be detected by a logical OR be-  
tween the previous and the current value.  
ENHANCED BUFFERED PROGRAM ABORT RESET Command  
After an ENHANCED BUFFERED PROGRAM command is aborted, the device will ac-  
cept only an ENHANCED BUFFERED PROGRAM ABORT RESET (F0h) command. This  
command resets the device following the aborted command and before the next com-  
mand can be executed. When this command completes and the device is reset, the  
memory waits for either an ENHANCED BUFFERED PROGRAM command or an EXIT  
ENHANCED BUFFERED PROGRAM command. The enhanced buffered programming  
sequence can be aborted in the following ways:  
• Write to an address in a different block than the one specified during the ENHANCED  
BUFFERED PROGRAM LOAD command.  
• Write an address/data pair to a different write buffer page than the one selected by  
the starting address during the program buffer data loading stage of the operation.  
• Write data other than the CONFIRM command after the specified number of data  
load cycles.  
• Load address/data pairs in an incorrect sequence during the enhanced buffered pro-  
gram.  
• Load a number of data that is less or greater than 256 during the program step.  
The abort condition is indicated by DQ1 = 1, DQ6 = toggle, and DQ5 = 0 (all of which are  
status register bits). A BUFFERED PROGRAM ABORT and RESET command sequence  
must be written to reset the device for the next operation.  
PDF: 09005aef84ecabef  
m29dw_256g.pdf - Rev. A 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2012 Micron Technology, Inc. All rights reserved.  
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