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M29DW256G 参数 Datasheet PDF下载

M29DW256G图片预览
型号: M29DW256G
PDF下载: 下载PDF文件 查看货源
内容描述: [Micron Parallel NOR Flash Embedded Memory]
分类和应用:
文件页数/大小: 78 页 / 1023 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Standard Command Definitions – Address-Data Cycles  
PROGRAM operation: N + 1 = bytes to be programmed; maximum buffer size = 32 words  
(x16).  
8. For x16, A[MAX:5] address pins should remain unchanged while A[4:0] pins are used to  
select a word within the N + 1 word page.  
9. The following is content for address-data cycles 256 through 258: BAd (FE) - Data; BAd  
(FF) - Data; BAd (00) - 29.  
10. BLOCK ERASE address cycles can extend beyond six address-data cycles, depending on  
the number of blocks to erase.  
PDF: 09005aef84ecabef  
m29dw_256g.pdf - Rev. A 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
29  
© 2012 Micron Technology, Inc. All rights reserved.  
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