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M25P40-VMN6PB 参数 Datasheet PDF下载

M25P40-VMN6PB图片预览
型号: M25P40-VMN6PB
PDF下载: 下载PDF文件 查看货源
内容描述: M25P40 3V的4Mb串行Flash的嵌入式存储器 [M25P40 3V 4Mb Serial Flash Embedded Memory]
分类和应用: 存储内存集成电路光电二极管时钟
文件页数/大小: 54 页 / 717 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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M25P40 Serial Flash Embedded Memory  
Configuration and Memory Map  
Configuration and Memory Map  
Memory Configuration and Block Diagram  
Each page of memory can be individually programmed; bits are programmed from 1 to  
0. The device is sector or bulk-erasable, but not page-erasable; bits are erased from 0 to  
1. The memory is configured as follows:  
• 524,288 bytes (8 bits each)  
• 8 sectors (512Kb, 65KB each)  
• 2048 pages (256 bytes each)  
Figure 6: Block Diagram  
HOLD#  
W#  
High Voltage  
Generator  
Control Logic  
S#  
C
DQ0  
DQ1  
I/O Shift Register  
Status  
Register  
Address Register  
and Counter  
256 Byte  
Data Buffer  
7FFFFh  
00000h  
000FFh  
256 bytes (page size)  
X Decoder  
PDF: 09005aef8456654f  
m25p40.pdf - Rev. G 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2011 Micron Technology, Inc. All rights reserved.  
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