M25P40 Serial Flash Embedded Memory
Features
M25P40 3V 4Mb Serial Flash Embedded
Memory
Features
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SPI bus-compatible serial interface
4Mb Flash memory
75 MHz clock frequency (maximum)
2.3V to 3.6V single supply voltage
Page program (up to 256 bytes) in 0.8ms (TYP)
Erase capability
– Sector erase: 512Kb in 0.6 s (TYP)
– Bulk erase: 4Mb in 4.5 s (TYP)
• Write protection
– Hardware write protection: protected area size
defined by nonvolatile bits BP0, BP1, BP2
• Deep power-down: 1µA (TYP)
• Electronic signature
– JEDEC-standard 2-byte signature (2013h)
– Unique ID code (UID) with 16-byte read-only
space, available upon request
– RES command, one-byte signature (12h) for
backward compatibility
• More than 100,000 write cycles per sector
• Automotive-grade parts available
• Packages (RoHS-compliant)
– SO8N (MN) 150 mils
– SO8W (MW) 208 mils
– VFDFPN8 (MP) MLP8 6mm x 5mm
– UFDFPN8 (MC) MLP8 4mm x 3mm
– UFDFPN8 (MB) MLP8 2mm x 3mm
PDF: 09005aef8456654f
m25p40.pdf - Rev. G 05/13 EN
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Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2011 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
