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M25P40-VMW6Gx 参数 Datasheet PDF下载

M25P40-VMW6Gx图片预览
型号: M25P40-VMW6Gx
PDF下载: 下载PDF文件 查看货源
内容描述: 美光M25P40串行闪存的嵌入式存储器 [Micron M25P40 Serial Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 59 页 / 785 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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Micron M25P40 Serial Flash Embedded Memory  
Power-Up/Down and Supply Line Decoupling  
Figure 21: Power-Up Timing  
V
CC  
V
CC,max  
PROGRAM, ERASE, and WRITE commands are rejected by the device  
Chip selection not allowed  
V
CC,min  
tVSL  
READ access allowed  
Device fully  
accessible  
RESET state  
of the  
device  
V
WI  
tPUW  
Time  
After power-up, the device is in the following state:  
• Standby power mode (not the deep power-down mode)  
• Write enable latch (WEL) bit is reset  
• Write in progress (WIP) bit is reset  
• Write lock bit = 0  
• Lock down bit = 0  
Normal precautions must be taken for supply line decoupling to stabilize the VCC sup-  
ply. Each device in a system should have the VCC line decoupled by a suitable capacitor  
close to the package pins; generally, this capacitor is of the order of 100 nF.  
At power-down, when VCC drops from the operating voltage to below the POR threshold  
voltage VWI, all operations are disabled and the device does not respond to any instruc-  
tion.  
Note:If power-down occurs while a WRITE, PROGRAM, or ERASE cycle is in progress,  
some data corruption may result.  
PDF: 09005aef8456654f  
m25p40.pdf - Rev. Y 8/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
35  
© 2011 Micron Technology, Inc. All rights reserved.