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M25P40-VMW6Gx 参数 Datasheet PDF下载

M25P40-VMW6Gx图片预览
型号: M25P40-VMW6Gx
PDF下载: 下载PDF文件 查看货源
内容描述: 美光M25P40串行闪存的嵌入式存储器 [Micron M25P40 Serial Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 59 页 / 785 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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Micron M25P40 Serial Flash Embedded Memory  
SECTOR ERASE  
SECTOR ERASE  
The SECTOR ERASE command sets to 1 (FFh) all bits inside the chosen sector. Before  
the SECTOR ERASE command can be accepted, a WRITE ENABLE command must have  
been executed previously. After the WRITE ENABLE command has been decoded, the  
device sets the write enable latch (WEL) bit.  
The SECTOR ERASE command is entered by driving chip select (S#) LOW, followed by  
the command code, and three address bytes on serial data input (DQ0). Any address in-  
side the sector is a valid address for the SECTOR ERASE command. S# must be driven  
LOW for the entire duration of the sequence.  
S# must be driven HIGH after the eighth bit of the last address byte has been latched in.  
Otherwise the SECTOR ERASE command is not executed. As soon as S# is driven HIGH,  
the self-timed SECTOR ERASE cycle is initiated; the cycle's duration is tSE. While the  
SECTOR ERASE cycle is in progress, the status register may be read to check the value of  
the write in progress (WIP) bit. The WIP bit is 1 during the self-timed SECTOR ERASE  
cycle, and is 0 when the cycle is completed. At some unspecified time before the cycle is  
completed, the WEL bit is reset.  
A SECTOR ERASE command is not executed if it applies to a sector that is hardware or  
software protected.  
Figure 16: SECTOR ERASE Command Sequence  
0
7
8
C
x
C
LSB  
A[MIN]  
DQ0  
Command  
MSB  
A[MAX]  
1. Cx = 7 + (A[MAX] + 1).  
Note:  
PDF: 09005aef8456654f  
m25p40.pdf - Rev. Y 8/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2011 Micron Technology, Inc. All rights reserved.