Micron M25P40 Serial Flash Embedded Memory
Electrical Characteristics
Electrical Characteristics
Table 12: DC Current Specifications (Device Grade 6)
Symbol Parameter
Test Conditions
Min
Max
±2
±2
50
10
8
Units
µA
ILI
Input leakage current
–
–
–
–
–
–
ILO
Output leakage current
Standby current
–
µA
ICC1
ICC2
ICC3
S# = VCC, VIN = VSS or VCC
S# = VCC, VIN = VSS or VCC
µA
Deep power-down current
Operating current (READ)
µA
C = 0.1VCC / 0.9VCC at 40 MHz, 50 MHz,
and 75 MHz, DQ1 = open
mA
C = 0.1VCC / 0.9VCC at 25 MHz and 33
MHz, DQ1 = open
–
–
–
–
–
4
mA
mA
mA
mA
mA
ICC4
ICC5
ICC6
ICC7
Operating current
(PAGE PROGRAM)
S# = VCC
S# = VCC
S# = VCC
S# = VCC
15
15
15
15
Operating current
(WRITE STATUS REGISTER)
Operating current
(SECTOR ERASE)
Operating current
(BULK ERASE)
Table 13: DC Voltage Specifications (Device Grade 6)
Symbol Parameter
Test Conditions
Min
Max
Units
VIL
VIH
Input LOW voltage
–
–0.5
0.3VCC
V
V
V
V
Input HIGH voltage
Output LOW voltage
Output HIGH voltage
–
0.7VCC VCC+0.4
VOL
VOH
IOL = 1.6mA
IOH = –100µA
–
0.4
–
VCC–0.2
Table 14: DC Current Specifications (Device Grade 3)
Symbol Parameter
Test Conditions
Min
Max
±2
Units
µA
ILI
Input leakage current
–
–
–
–
–
–
ILO
Output leakage current
Standby current
–
±2
µA
ICC1
ICC2
ICC3
S# = VCC, VIN = VSS or VCC
S# = VCC, VIN = VSS or VCC
100
50
µA
Deep power-down current
Operating current (READ)
µA
C = 0.1VCC / 0.9VCC at 40 MHz, 50 MHz,
and 75 MHz, DQ1 = open
8
mA
C = 0.1VCC / 0.9VCC at 25 MHz and 33
MHz, DQ1 = open
–
–
4
mA
mA
ICC4
Operating current
(PAGE PROGRAM)
S# = VCC
15
PDF: 09005aef8456654f
m25p40.pdf - Rev. Y 8/12 EN
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38
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