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M25P40-VMB6Txx 参数 Datasheet PDF下载

M25P40-VMB6Txx图片预览
型号: M25P40-VMB6Txx
PDF下载: 下载PDF文件 查看货源
内容描述: 美光M25P40串行闪存的嵌入式存储器 [Micron M25P40 Serial Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 59 页 / 785 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号M25P40-VMB6Txx的Datasheet PDF文件第41页浏览型号M25P40-VMB6Txx的Datasheet PDF文件第42页浏览型号M25P40-VMB6Txx的Datasheet PDF文件第43页浏览型号M25P40-VMB6Txx的Datasheet PDF文件第44页浏览型号M25P40-VMB6Txx的Datasheet PDF文件第46页浏览型号M25P40-VMB6Txx的Datasheet PDF文件第47页浏览型号M25P40-VMB6Txx的Datasheet PDF文件第48页浏览型号M25P40-VMB6Txx的Datasheet PDF文件第49页  
Micron M25P40 Serial Flash Embedded Memory  
AC Characteristics  
Table 24: AC Specifications (75MHz, Device Grade 3 and 6, VCC[min]=2.7V)  
Symbol  
fC  
Alt.  
fC  
Parameter  
Min  
D.C.  
D.C.  
6
Typ  
Max  
75  
33  
Unit  
MHz  
MHz  
ns  
Notes  
Clock frequency for all commands (except READ)  
Clock frequency for READ command  
fR  
tCH  
tCLH Clock HIGH time  
tCLL Clock LOW time  
3
tCL  
6
ns  
3, 4  
5, 6  
5, 6  
tCLCH  
tCHCL  
tSLCH  
tCHSL  
tDVCH  
tCHDX  
tCHSH  
tSHCH  
tSHSL  
tSHQZ  
tCLQV  
Clock rise time (peak to peak)  
Clock fall time (peak to peak)  
0.1  
0.1  
5
V/ns  
V/ns  
ns  
tCSS S# active setup time (relative to C)  
S# not active hold time (relative to C)  
tDSU Data In setup time  
5
ns  
2
ns  
tDH  
Data In hold time  
5
ns  
S# active hold time (relative to C)  
S# not active setup time (relative to C)  
5
ns  
5
ns  
tCSH S# deselect time  
100  
ns  
tDIS  
tV  
Output disable time  
8
ns  
5
Clock LOW to output valid under 30 pF  
Clock LOW to output valid under 10 pF  
Output hold time  
8
ns  
6
ns  
tCLQX  
tHLCH  
tCHHH  
tHHCH  
tCHHL  
tHHQX  
tHLQZ  
tWHSL  
tSHWL  
tDP  
tHO  
0
ns  
HOLD# setup time (relative to C)  
HOLD# hold time (relative to C)  
HOLD# setup time (relative to C)  
HOLD# hold time (relative to C)  
HOLD# to output LOW-Z  
5
ns  
5
ns  
5
ns  
5
ns  
tLZ  
tHZ  
8
ns  
5
5
7
7
5
5
HOLD# to output HIGH-Z  
8
ns  
WRITE PROTECT setup time  
WRITE PROTECT hold time  
20  
100  
ns  
ns  
S# HIGH to DEEP POWER-DOWN mode  
3
μs  
tRES1  
S# HIGH to STANDBY without READ ELECTRONIC SIGNA-  
TURE  
30  
μs  
tRES2  
S# HIGH to STANDBY with READ ELECTRONIC SIGNATURE  
30  
μs  
5
1. Applies to entire table: 110nm technology devices are identified by the process identifi-  
Notes:  
cation digit 4 in the device marking and the process letter B in the part number.  
2. Applies to entire table: the AC specification values shown here are allowed only on the  
VCC range 2.7V to 3.6V. Maximum frequency in the VCC range 2.3V to 2.7V is 40MHz.  
3. The tCH and tCL signal values must be greater than or equal to 1/fC.  
4. Typical values are given for TA = 25°C.  
5. The tCLCH, tCHCL, tSHQZ, tHHQX, tHLQZ, tDP, and tRDP signal values are guaranteed by charac-  
terization, not 100% tested in production.  
6. The tCLCH and tCHCL signals clock rise and fall time values are expressed as a slew-rate.  
7. The tWHSL and tSHWL signal values are only applicable as a constraint for a WRITE STATUS  
REGISTER command when SRWD bit is set at 1.  
PDF: 09005aef8456654f  
m25p40.pdf - Rev. Y 8/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
45  
© 2011 Micron Technology, Inc. All rights reserved.