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JS28F512P30TF 参数 Datasheet PDF下载

JS28F512P30TF图片预览
型号: JS28F512P30TF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm  
Flowcharts  
Figure 19: Erase Suspend/Resume Procedure  
=
SR6  
Start  
0
Erase  
Completed  
1 = Suspended  
0 = Completed  
Read Status  
1
Write 70h  
Any Address  
Read  
Program  
Erase Suspend  
Read/Program?  
(FFh/40h)  
Write B0h  
Any Address  
Read Array Data from  
a block other than the  
one being erased  
Program Loop: to a  
block other than the  
one being erased  
No  
Done?  
Address = X  
Read Status Register  
Toggle CE#/OE# to  
update the  
status register  
Yes  
Erase Resume  
=
SR7  
0
1 = Ready  
0 = Busy  
Read Array  
Write D0h  
Any Address  
1
Write FFh  
1
Erase  
Resumed  
Read Array  
Data  
Read Status  
Write 70h  
Any Address  
1. The tERS/SUSP timing between the initial BLOCK ERASE or ERASE RESUME command and  
a subsequent ERASE SUSPEND command should be followed.  
Note:  
PDF: 09005aef845667b3  
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
67  
© 2013 Micron Technology, Inc. All rights reserved.  
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