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JS28F512P30TF 参数 Datasheet PDF下载

JS28F512P30TF图片预览
型号: JS28F512P30TF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm  
Common Flash Interface  
Table 30: Partition Region 1: Partition and Erase Block Map Information (Continued)  
Add.  
512Mb  
1Gb  
2Gb  
Symm.  
Symm.  
Top  
Bottom  
--80  
Symm.  
Top  
Bottom  
Symm.  
Upper Die  
Lower Die  
151:  
--80  
--FF  
--80  
--80  
--FF  
--FF  
--FF  
Table 31: CFI Link Information – 2Gb  
ASCII Value  
(DQ[7:0])  
Length  
Description  
Address  
4
CFI Link field bit definitions:  
144:  
145:  
146:  
147  
See Note 1  
Bits 0 - 9 = Address offset (within 32Mb segment of referenced CFI table)  
Bits 10 - 27 = nth 32Mb segment of referenced CFI table  
Bits 28 - 30 = Memory Type  
Bit 31 = Another CFI link field immediately follows  
1
CFI Link field quantity subfield definitions:  
Bits 0 - 3 = Quantity field (n such that n+1 equals quantity)  
Bit 4 = Table and die relative location  
Bit 5 = Link field and table relative location  
Bits 6 - 7 = Reserved  
148:  
1. See "Partition Region 1: Partition and Erase Block Map Information" table.  
Note:  
PDF: 09005aef845667b3  
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2013 Micron Technology, Inc. All rights reserved.  
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