欢迎访问ic37.com |
会员登录 免费注册
发布采购

JS28F512P30TF 参数 Datasheet PDF下载

JS28F512P30TF图片预览
型号: JS28F512P30TF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号JS28F512P30TF的Datasheet PDF文件第40页浏览型号JS28F512P30TF的Datasheet PDF文件第41页浏览型号JS28F512P30TF的Datasheet PDF文件第42页浏览型号JS28F512P30TF的Datasheet PDF文件第43页浏览型号JS28F512P30TF的Datasheet PDF文件第45页浏览型号JS28F512P30TF的Datasheet PDF文件第46页浏览型号JS28F512P30TF的Datasheet PDF文件第47页浏览型号JS28F512P30TF的Datasheet PDF文件第48页  
512Mb, 1Gb, 2Gb: P30-65nm  
Configuration Register  
Table 16: Burst Sequence Word Ordering (Continued)  
Burst Addressing Sequence (DEC)  
Start  
Address  
(DEC)  
Burst  
Wrap  
(RCR3)  
4-Word Burst  
(BL[2:0] =  
0b001)  
8-Word Burst  
(BL[2:0] = 0b010)  
16-Word Burst  
(BL[2:0] = 0b011)  
Continuous Burst  
(BL[2:0] = 0b111)  
4
5
1
1
1
1
4-5-6-7-8-9-10-11  
5-6-7-8-9-10-11-12  
6-7-8-9-10-11-12-13  
7-8-9-10-11-12-13-14  
4-5-6-7-8…18-19  
5-6-7-8-9…19-20  
6-7-8-9-10…20-21  
7-8-9-10-11…21-22  
4-5-6-7-8-9-10…  
5-6-7-8-9-10-11…  
6-7-8-9-10-11-12-…  
7-8-9-10-11-12-13…  
6
7
14  
15  
1
1
14-15-16-17-18…28-29  
15-16-17-18-19…29-30  
14-15-16-17-18-19-20-…  
15-16-17-18-19-20-21-…  
Clock Edge  
Burst Wrap  
The clock edge (CE) bit selects either a rising (default) or falling clock edge for CLK. This  
clock edge is used at the start of a burst cycle to output synchronous data and to  
assert/de-assert WAIT.  
The burst wrap (BW) bit determines whether 4-word, 8-word, or 16-word burst length  
accesses wrap within the selected word length boundaries or cross word length boun-  
daries. When BW is set, burst wrapping does not occur (default). When BW is cleared,  
burst wrapping occurs.  
When performing synchronous burst reads with BW set (no wrap), an output delay may  
occur when the burst sequence crosses its first device row (16-word) boundary. If the  
burst sequence’s start address is 4-word aligned, then no delay occurs. If the start ad-  
dress is at the end of a 4-word boundary, the worst-case output delay is one clock cycle  
less than the first access latency count. This delay can take place only once and doesn’t  
occur if the burst sequence does not cross a device row boundary. WAIT informs the  
system of this delay when it occurs.  
Burst Length  
The burst length bits (BL[2:0]) select the linear burst length for all synchronous burst  
reads of the flash memory array. The burst lengths are 4-word, 8-word, 16-word, or con-  
tinuous.  
Continuous burst accesses are linear only and do not wrap within any word length  
boundaries. When a burst cycle begins, the device outputs synchronous burst data until  
it reaches the end of the “burstable” address space.  
PDF: 09005aef845667b3  
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
44  
© 2013 Micron Technology, Inc. All rights reserved.  
 复制成功!