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JS28F512M29EWLB 参数 Datasheet PDF下载

JS28F512M29EWLB图片预览
型号: JS28F512M29EWLB
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 75 页 / 855 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号JS28F512M29EWLB的Datasheet PDF文件第67页浏览型号JS28F512M29EWLB的Datasheet PDF文件第68页浏览型号JS28F512M29EWLB的Datasheet PDF文件第69页浏览型号JS28F512M29EWLB的Datasheet PDF文件第70页浏览型号JS28F512M29EWLB的Datasheet PDF文件第72页浏览型号JS28F512M29EWLB的Datasheet PDF文件第73页浏览型号JS28F512M29EWLB的Datasheet PDF文件第74页浏览型号JS28F512M29EWLB的Datasheet PDF文件第75页  
256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash  
Program/Erase Characteristics  
Program/Erase Characteristics  
Table 33: Program/Erase Characteristics  
Notes 1 and 2 apply to the entire table.  
Buffer  
Size  
Parameter  
Byte  
Word  
Min  
Typ  
0.8  
Max  
4
Unit  
s
Notes  
Block erase (128KB)  
Erase suspend latency time  
Block erase timeout  
27  
32  
µs  
50  
µs  
Byte program  
Single-byte program  
210  
270  
310  
375  
4.22  
2.42  
1.46  
210  
270  
310  
375  
505  
900  
8.44  
4.84  
2.93  
1.97  
1.76  
27  
456  
716  
900  
1140  
11.2  
7
µs  
Byte write to buffer program  
64  
128  
256  
64  
128  
256  
64  
128  
256  
1
µs  
µs  
µs  
Effective write to buffer  
program per byte  
µs  
1
µs  
1
4.45  
456  
716  
900  
1140  
1690  
3016  
22.4  
14.1  
8.9  
6.6  
5.89  
32  
µs  
Word program Single-word program  
Word write to buffer program  
µs  
32  
64  
128  
256  
512  
32  
64  
128  
256  
512  
32  
64  
128  
256  
512  
1
µs  
µs  
µs  
µs  
µs  
Effective write to buffer  
program per word  
µs  
1
µs  
1
µs  
1
µs  
1
µs  
Program suspend latency time  
µs  
Blank check  
100,000  
3.2  
ms  
cycles  
µs  
PROGRAM/ERASE cycles (per block)  
Erase to suspend  
500  
3
1. Typical values measured at room temperature and nominal voltages.  
2. Typical and maximum values are sampled, but not 100% tested.  
Notes:  
3. Erase to suspend is the typical time between an initial BLOCK ERASE or ERASE RESUME  
command and a subsequent ERASE SUSPEND command. Violating the specification re-  
peatedly during any particular block erase may cause erase failures.  
PDF: 09005aef849b4b09  
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
71  
© 2012 Micron Technology, Inc. All rights reserved.