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JS28F512M29EWLB 参数 Datasheet PDF下载

JS28F512M29EWLB图片预览
型号: JS28F512M29EWLB
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 75 页 / 855 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash  
Standard Command Definitions – Address-Data Cycles  
Table 11: Standard Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit (Continued)  
Note 1 applies to entire table  
Address and Data Cycles  
1st  
2nd  
3rd  
4th  
5th  
6th  
Command and  
Code/Subcode  
Bus  
Size  
A
D
A
D
A
D
A
D
A
D
A
D
Notes  
CHIP ERASE (80/10h)  
x8  
x16  
x8  
AAA AA  
555  
555  
2AA  
X
55  
AAA  
555  
80 AAA AA  
555  
555  
55  
AAA  
555  
10  
2AA  
UNLOCK BYPASS  
CHIP ERASE (80/10h)  
X
80  
10  
55  
30  
5
9
5
x16  
x8  
BLOCK ERASE (80/30h)  
AAA AA  
555  
555  
2AA  
BAd  
AAA  
555  
80 AAA AA  
555  
555  
55  
BAd  
30  
x16  
x8  
2AA  
UNLOCK BYPASS  
BLOCK ERASE (80/30h)  
X
X
X
80  
B0  
30  
x16  
x8  
ERASE SUSPEND (B0h)  
x16  
x8  
ERASE RESUME (30h)  
x16  
BLANK CHECK Operations  
BLANK CHECK  
SETUP (EB/76h)  
x8  
x16  
AAA AA  
555  
555  
55  
BAd  
EB  
BAd  
76  
BAd  
00  
BAd  
00  
2AA  
BLANK CHECK CONFIRM x8  
BAd  
29  
BAd Note  
2
2
and READ (29h)  
x16  
1. A = Address; D = Data; X = "Don't Care;" BAd = Any address in the block; N = Number of  
bytes to be programmed; PA = Program address; PD = Program data; Gray shading = Not  
applicable. All values in the table are hexadecimal. Some commands require both a com-  
mand code and subcode. For the 2Gb device, the set-up command must be issued for  
each selected die.  
Notes:  
2. These cells represent READ cycles (versus WRITE cycles for the others).  
3. AUTO SELECT enables the device to read the manufacturer code, device code, block pro-  
tection status, and extended memory block protection indicator.  
4. AUTO SELECT addresses and data are specified in the Electronic Signature table and the  
Extended Memory Block Protection table.  
5. For any UNLOCK BYPASS ERASE/PROGRAM command, the first two UNLOCK cycles are  
unnecessary.  
6. BAd must be the same as the address loaded during the WRITE TO BUFFER PROGRAM  
3rd and 4th cycles.  
7. WRITE TO BUFFER PROGRAM operation: maximum cycles = 261 (x8) and 517 (x16). UN-  
LOCK BYPASS WRITE TO BUFFER PROGRAM operation: maximum cycles = 259 (x8), 515  
(x16). WRITE TO BUFFER PROGRAM operation: N + 1 = bytes to be programmed; maxi-  
mum buffer size = 256 bytes (x8) and 1024 bytes (x16).  
8. For x8, A[MAX:7] address pins should remain unchanged while A[6:0] and A-1 pins are  
used to select a byte within the N + 1 byte page. For x16, A[MAX:9] address pins should  
remain unchanged while A[8:0] pins are used to select a word within the N+1 word  
page.  
9. BLOCK ERASE address cycles can extend beyond six address-data cycles, depending on  
the number of blocks to erase.  
PDF: 09005aef849b4b09  
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
25  
© 2012 Micron Technology, Inc. All rights reserved.  
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