256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Figure 25: CE#-Controlled Program AC Timing (16-Bit Mode)
3rd Cycle 4th Cycle
Data Polling
PA
t
WC
WS
A[MAX:0]
WE#
555h
t
PA
t
AS
AH
t
WH
t
t
GHEL
OE#
CE#
t
t
t
CP
CPH
PD
tWHWH1
DQ7#
DS
DQ[15:0]
AOh
D
OUT
t
DH
1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-
GRAM command is followed by checking of the status register data polling bit.
Notes:
2. PA is the address of the memory location to be programmed. PD is the data to be pro-
grammed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit
[DQ7]).
4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
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