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JS28F256P30TFA 参数 Datasheet PDF下载

JS28F256P30TFA图片预览
型号: JS28F256P30TFA
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 95 页 / 1340 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
Virtual Chip Enable Description  
Virtual Chip Enable Description  
The P30-65nm 512Mb devices employ a virtual chip enable feature, which combines  
two 256Mb die with a common chip enable, F1-CE# for QUAD+ packages, or CE# for  
Easy BGA Packages. The maximum address bit is then used to select between the die  
pair with F1-CE#/CE# asserted depending upon the package option used. When chip  
enable is asserted and the maximum address bit is LOW (VIL), the lower parameter die  
is selected; when chip enable is asserted and the maximum address bit is HIGH (VIH),  
the upper parameter die is selected (see the tables below).  
Table 5: Virtual Chip Enable Truth Table for 512Mb (QUAD+ Package)  
Die Selected  
Lower Param Die  
Upper Param Die  
F1-CE#  
A24  
L
L
L
H
Table 6: Virtual Chip Enable Truth Table for 512Mb (Easy BGA Packages)  
Die Selected  
Lower Param Die  
Upper Param Die  
CE#  
A25  
L
L
L
H
Figure 1: 512Mb Easy BGA Block Diagram  
Easy BGA 512Mb (Dual Die) Top/Bottom  
Parameter Configuration  
Top Parameter Die  
256Mb  
CE#  
WP#  
OE#  
RST#  
V
CC  
V
WE#  
CLK  
PP  
V
CCQ  
Bottom Parameter Die  
256Mb  
V
ADV#  
SS  
DQ[15:0]  
WAIT  
A[MAX:1]  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. A 1/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.