256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
DC Characteristics
DC Characteristics
Table 27: DC Current Characteristics
Parameter
Symbol
Conditions
0V ≤ VIN ≤ VCC
0V ≤ VOUT ≤ VCC
Min
Typ
–
Max
±1
Unit Notes
Input leakage current
Output leakage current
ILI
–
–
–
µA
µA
1
ILO
–
±1
VCC read
current
Random read
ICC1
CE# = VIL, OE# = VIH,
26
31
mA
f = 5 MHz
Page read
CE# = VIL, OE# = VIH,
–
12
16
mA
f = 13 MHz
VCC standby
current
256Mb
512Mb
1Gb
ICC2
CE# = VCCQ ±0.2V,
RST# = VCCQ ±0.2V
–
–
–
–
–
65
70
210
225
240
480
50
µA
µA
µA
µA
mA
75
2Gb
150
35
VCC program/erase/blank
check current
ICC3
Program/
erase
VPP/WP# = VIL
or VIH
2
controller
active
VPP/WP# =
VPPH
–
35
50
mA
VPP current
Read
IPP1
VPP/WP# ≤ VCC
–
–
–
–
–
–
–
0.2
2
5
µA
µA
Standby
Reset
15
IPP2
IPP3
RST# = VSS ±0.2V
VPP/WP# = 12V ±5%
VPP/WP# = VCC
0.2
5
µA
PROGRAM operation
ongoing
0.05
0.05
0.05
0.05
0.10
0.10
0.10
0.10
mA
mA
mA
mA
ERASE operation
ongoing
IPP4
VPP/WP# = 12V ±5%
VPP/WP# = VCC
1. The maximum input leakage current is ±5µA on the VPP/WP# pin.
2. Sampled only; not 100% tested.
Notes:
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
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57
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