256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Figure 22: WE#-Controlled Program AC Timing (8-Bit Mode)
3rd Cycle 4th Cycle
Data Polling
READ Cycle
t
t
WC
WC
AAAh
t
PA
PA
A[MAX:0]/A-1
CE#
t
AS
AH
t
t
CH
t
E
CS
t
t
GHWL
OE
OE#
t
t
WP
WPH
WE#
t
t
DF
OH
t
WHWH1
t
DS
DQ[7:0]
AOh
DH
PD
DQ7#
D
D
OUT
OUT
t
1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-
GRAM command is followed by checking of the status register data polling bit and by a
READ operation that outputs the data (DOUT) programmed by the previous PROGRAM
command.
Notes:
2. PA is the address of the memory location to be programmed. PD is the data to be pro-
grammed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit
[DQ7]).
4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
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