512Mb, 1Gb, 2Gb: P33-65nm
AC Test Conditions and Capacitance
Table 38: Capacitance
Sym-
Parameter
bol
Signal
Density
512Mb
1Gb
Min
Typ
7
Max Unit
Condition
Notes
Input
Capacitance
CIN
Address, Data,
CE#, WE#, OE#,
RST#, CLK,
3
4
6
8
9
pF
TYP temp = 25°C; MAX
temp = 85°C
VCC = 0–2.0V, VCCQ = 0–
3.6V
1
8
2Gb
16
18
ADV#, WP#
Discrete silicon die
Output
Capacitance
COUT
Data, WAIT
512Mb
1Gb
3
3
6
5
5
7
6
2Gb
10
12
1. Sampled, but not 100% tested.
Note:
PDF: 09005aef845667b8
p33_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. C 12/13 EN
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